SRAM Module, 512KX8, 85ns, CMOS
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
package instruction | DIP, DIP48,1.4 |
Reach Compliance Code | unknown |
ECCN code | 3A001.A.2.C |
Maximum access time | 85 ns |
I/O type | COMMON |
JESD-30 code | R-XDMA-T48 |
JESD-609 code | e0 |
memory density | 4194304 bit |
Memory IC Type | SRAM MODULE |
memory width | 8 |
Number of functions | 1 |
Number of ports | 1 |
Number of terminals | 48 |
word count | 524288 words |
character code | 512000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 125 °C |
Minimum operating temperature | -55 °C |
organize | 512KX8 |
Output characteristics | 3-STATE |
Exportable | YES |
Package body material | UNSPECIFIED |
encapsulated code | DIP |
Encapsulate equivalent code | DIP48,1.4 |
Package shape | RECTANGULAR |
Package form | MICROELECTRONIC ASSEMBLY |
Parallel/Serial | PARALLEL |
Certification status | Not Qualified |
Filter level | MIL-STD-883 Class B (Modified) |
Maximum standby current | 0.01 A |
Minimum standby current | 2 V |
Maximum slew rate | 0.47 mA |
Maximum supply voltage (Vsup) | 5.5 V |
Minimum supply voltage (Vsup) | 4.5 V |
Nominal supply voltage (Vsup) | 5 V |
surface mount | NO |
technology | CMOS |
Temperature level | MILITARY |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE |
Terminal pitch | 2.54 mm |
Terminal location | DUAL |
Base Number Matches | 1 |