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KM41V4000CZ-6

Description
Fast Page DRAM, 4MX1, 60ns, CMOS, PZIP20, 0.400 INCH, PLASTIC, ZIP-20
Categorystorage    storage   
File Size255KB,8 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

KM41V4000CZ-6 Overview

Fast Page DRAM, 4MX1, 60ns, CMOS, PZIP20, 0.400 INCH, PLASTIC, ZIP-20

KM41V4000CZ-6 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeZIP
package instructionZIP, ZIP20,.1
Contacts20
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE
Maximum access time60 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O typeSEPARATE
JESD-30 codeR-PZIP-T20
JESD-609 codee0
length26.165 mm
memory density4194304 bit
Memory IC TypeFAST PAGE DRAM
memory width1
Number of functions1
Number of ports1
Number of terminals20
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize4MX1
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeZIP
Encapsulate equivalent codeZIP20,.1
Package shapeRECTANGULAR
Package formIN-LINE
power supply3.3 V
Certification statusNot Qualified
refresh cycle1024
Maximum seat height10.16 mm
self refreshNO
Maximum standby current0.0005 A
Maximum slew rate0.06 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch1.27 mm
Terminal locationZIG-ZAG
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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