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IS61QDB41M18A-300B3I

Description
QDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.20 MM HEIGHT, TFBGA-165
Categorystorage    storage   
File Size492KB,30 Pages
ManufacturerIntegrated Silicon Solution ( ISSI )
Download Datasheet Parametric View All

IS61QDB41M18A-300B3I Overview

QDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.20 MM HEIGHT, TFBGA-165

IS61QDB41M18A-300B3I Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction13 X 15 MM, 1.20 MM HEIGHT, TFBGA-165
Reach Compliance Codecompliant
Maximum access time0.45 ns
Maximum clock frequency (fCLK)300 MHz
I/O typeSEPARATE
JESD-30 codeR-PBGA-B165
length15 mm
memory density18874368 bit
Memory IC TypeQDR SRAM
memory width18
Number of functions1
Number of terminals165
word count1048576 words
character code1000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize1MX18
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTBGA
Encapsulate equivalent codeBGA165,11X15,40
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE
Parallel/SerialPARALLEL
power supply1.5/1.8,1.8 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum standby current0.28 A
Minimum standby current1.7 V
Maximum slew rate0.7 mA
Maximum supply voltage (Vsup)1.89 V
Minimum supply voltage (Vsup)1.71 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
width13 mm
Base Number Matches1

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