TOSHIBA PHOTOCOUPLER IRED & PHOTO-TRANSISTOR
TLP285
TLP285
Power Supplies
Programmable Controllers
Hybrid ICs
The Toshiba TLP285 consists of photo transistor, optically coupled to an
infrared emitting diode. TLP285 is housed in the SOP4 package, very small
and thin coupler.
Since TLP285 is guaranteed wide operating temperature (Ta = -55 to 110 ˚C)
and high isolation voltage (3750 Vrms), it’s suitable for high-density surface
mounting applications such as small switching power supplies and
programmable controllers.
Collector-Emitter Voltage
Current Transfer Ratio
Rank GB
Isolation Voltage
UL-recognized
cUL-recognized
: 80 V (min)
: 50% (min)
: 100% (min)
: 3750 Vrms (min)
: UL 1577, File No.E67349
: CSA Component Acceptance Service No.5A
File No.E67349
: EN 60747-5-5 (Note 1)
TOSHIBA
11-3A1
Weight: 0.05 g (typ.)
Unit: mm
Guaranteed performance over -55 to 110 ˚C
VDE-approved
Pin Configuration (top view)
1
4
3
1: ANODE
2: CATHODE
3: EMITTER
4: COLLECTOR
Note 1: When a VDE approved type is needed,
please designate the
Option(V4).
Construction Mechanical Rating
Creepage Distance
Clearance
Insulation Thickness
5.0 mm (min)
5.0 mm (min)
0.4 mm (min)
2
Start of commercial production
© 2019
Toshiba Electronic Devices & Storage Corporation
2008-01
1
2019-06-17
Current Transfer Ratio
TYPE
Classification
(Note1)
Blank
Rank Y
Rank GR
Rank BL
TLP285
Rank GB
Rank YH
Rank GRL
Rank GRH
Rank BLL
Current Transfer Ratio (%)
(I
C
/I
F
)
I
F
= 5 mA, V
CE
= 5 V, Ta = 25°C
Min
Max
50
50
100
200
100
75
100
150
200
600
150
300
600
600
150
200
300
400
YE, Y
■
GR, G, G
■
BL, B
GB, GR, G, G
■
, BL, B
Y
■
G
G
■
B
Marking of Classification
Blank,Y
■
, YE, G, G
■
, GR, B, BL, GB
TLP285
Note1: Ex. rank GB: TLP285 (GB)
Note: Application type name for certification test, please use standard product type name, i.e.
TLP285 (GB): TLP285
© 2019
Toshiba Electronic Devices & Storage Corporation
2
2019-06-17
TLP285
Absolute Maximum Ratings
(Ta = 25°C)
CHARACTERISTIC
Forward Current
Forward Current Derating (Ta ≥ 75°C)
Pulse Forward Current
LED
Reverse Voltage
Diode power dissipation
Diode power dissipation derating (Ta ≥ 75°C)
Junction Temperature
Collector-Emitter Voltage
DETECTOR
Emitter-Collector Voltage
Collector Current
Collector Power Dissipation
Collector Power Dissipation Derating (Ta ≥ 25°C)
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature (10 s)
Total Package Power Dissipation
Total Package Power Dissipation Derating (Ta ≥ 25°C)
Isolation Voltage
(Note 2)
(Note 1)
SYMBOL
I
F(RMS)
∆I
F
/°C
I
FP
V
R
P
D
RATING
50
-1.0
1
5
100
-2.0
125
80
7
50
150
-1.5
125
-55 to 110
-55 to 125
260
200
-2.0
3750
UNIT
mA
mA/°C
A
V
mW
mW/°C
°C
V
V
mA
mW
mW/°C
°C
°C
°C
°C
mW
mW/°C
Vrms
∆
P
D
/°C
T
j
V
CEO
V
ECO
I
C
P
C
∆P
C
/°C
T
j
T
opr
T
stg
T
sol
P
T
∆P
T
/°C
BV
S
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width
≤
100
μs,
frequency 100 Hz
Note 2: AC, 60 s, R.H.≤60 %
Device considered a two terminal device : LED side pins shorted together and DETECTOR side pins shorted
together.
Electrical Characteristics
(Ta = 25°C)
CHARACTERISTIC
Forward Voltage
LED
Reverse Current
Capacitance
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
DETECTOR
Collector Dark Current
SYMBOL
V
F
I
R
C
T
V
(BR)CEO
V
(BR)ECO
TEST CONDITION
I
F
= 10 mA
V
R
= 5 V
V = 0 V, f = 1 MHz
I
C
= 0.5 mA
I
E
= 0.1 mA
V
CE
= 48 V,
Ambient Light Below
(100 ℓx)
V
CE
= 48 V, Ta = 85 °C
Ambient Light Below
(100 ℓx)
V = 0 V, f = 1 MHz
(Note 1)
(Note 1)
MIN
1.0
—
—
80
7
—
—
—
TYP.
1.15
—
30
—
—
0.01
(2)
2
(4)
10
MAX
1.3
10
—
—
—
0.1
(10)
50
(50)
—
UNIT
V
μA
pF
V
V
μA
μA
pF
(Note 2)
I
CEO
Capacitance
(Collector to Emitter)
C
CE
Note 1: Irradiation to marking side using standard light bulb.
Note 2: Because of the construction, leak current might be increased by ambient light.
Please use photocoupler with less ambient light.
© 2019
Toshiba Electronic Devices & Storage Corporation
3
2019-06-17
TLP285
Coupled Electrical Characteristics
(Ta = 25°C)
CHARACTERISTIC
Current Transfer Ratio
SYMBOL
I
C
/I
F
TEST CONDITION
I
F
= 5 mA, V
CE
= 5 V
Rank GB
I
F
= 1 mA, V
CE
= 0.4 V
Rank GB
I
C
= 2.4 mA, I
F
= 8 mA
V
CE(sat)
I
C
= 0.2 mA, I
F
= 1 mA
Rank GB
I
C(off)
V
F
= 0.7 V, V
CE
= 48 V
MIN
50
100
—
30
—
—
—
—
TYP.
—
—
60
—
—
0.2
—
—
MAX
600
600
—
—
0.4
—
0.4
10
μA
V
UNIT
%
Saturated CTR
I
C
/I
F(sat)
%
Collector-Emitter
Saturation Voltage
OFF-State Collector Current
Isolation Characteristics
(Ta = 25°C)
CHARACTERISTIC
Capacitance
(Input to Output)
Isolation Resistance
Isolation Voltage
SYMBOL
C
S
R
S
BV
S
TEST CONDITION
V
S
= 0 V, f = 1 MHz
V
S
= 500 V, R.H.≤60 %
AC, 60 s
MIN
—
1×10
12
3750
TYP.
0.8
10
14
—
MAX
—
—
—
UNIT
pF
Ω
Vrms
Switching Characteristics
(Ta = 25°C)
CHARACTERISTIC
Rise Time
Fall Time
Turn-On Time
Turn-Off Time
Turn-On Time
Storage Time
Turn-Off Time
SYMBOL
t
r
t
f
t
on
t
off
t
ON
t
s
t
OFF
R
L
= 1.9 kΩ
V
CC
= 5 V, I
F
= 16 mA
(Fig.1)
V
CC
= 10 V, I
C
= 2 mA
R
L
= 100 Ω
TEST CONDITION
MIN
—
—
—
—
—
—
—
TYP.
2
3
3
3
2
25
40
MAX
—
—
—
—
—
—
—
μs
μs
UNIT
Fig.1: Switching Time Test Circuit
© 2019
Toshiba Electronic Devices & Storage Corporation
4
2019-06-17
TLP285
I F - Ta
100
P C - Ta
200
180
160
Allowable collector power
Dissipation PC (mW)
I F (mA)
80
60
40
20
0
-20
0
20
40
60
80
100
120
140
120
100
80
60
40
20
0
-20
0
20
40
60
80
100
120
Allowable forward current
Ambient temperature Ta (˚C)
Ambient temperature Ta (˚C)
IFP-DR
IF-VF
3000
(mA)
Pulse Width
Ta=25˚C
100
I
FP
1000
500
300
100
50
30
10
I
F
(mA)
≤100μs
10
Pulse forward current
Forward current
1
100˚C
75˚C
50˚C
25˚C
0˚C
-25˚C
-50˚C
0.1
10
-3
10
-2
10
-1
10
0
0.6
0.8
1
1.2
1.4
1.6
Duty cycle ratio D
R
∆ V F / ∆ Ta - I F
-3.2
Forward voltage temperature coefficient
ΔV
F /ΔTa (mV/°C)
1000
Forward voltage V
F
IFP – VFP
(V)
-2.8
-2.4
-2
-1.6
-1.2
-0.8
-0.4
0.1
0.5
I
FP
(mA)
100
Pulse forward current
10
Pulse width≤10μs
Repetitive
Frequency=100Hz
Ta=25°C
1
0.6
1
1.4
1.8
1
5
10
50
2.2
2.6
3
Forward current
I
F
(mA)
Pulse forward voltage VFP
(V)
NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
© 2019
Toshiba Electronic Devices & Storage Corporation
5
2019-06-17
MEMS sensors
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