Transistor
2SC5379
Silicon NPN epitaxial planer type
For low-voltage low-noise high-frequency oscillation
Unit: mm
1.6±0.15
s
Features
q
q
q
q
0.4
0.8±0.1
0.4
0.2
–0.05
0.15
–0.05
+0.1
Low noise figure NF.
High gain.
High transition frequency f
T
.
SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing.
1.6±0.1
1.0±0.1
0.5
1
0.5
3
2
0.45±0.1 0.3
0.75±0.15
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
15
8
2
80
125
125
–55 ~ +125
Unit
V
V
V
mA
mW
˚C
˚C
1:Base
2:Emitter
3:Collector
EIAJ:SC–75
SS–Mini Type Package
Marking symbol :
HT
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Transition frequency
Collector output capacitance
Foward transfer gain
Noise figure
(Ta=25˚C)
Symbol
I
CBO
I
EBO
h
FE*
f
T
C
ob
| S
21e
|
2
NF
Conditions
V
CB
= 10V, I
E
= 0
V
EB
= 1V, I
C
= 0
V
CE
= 5V, I
C
= 10mA
V
CE
= 5V, I
C
= 10mA, f = 2GHz
V
CB
= 5V, I
E
= 0, f = 1MHz
V
CE
= 5V, I
C
= 10mA, f = 1GHz
V
CE
= 5V, I
C
= 3mA, f = 1GHz
8.5
80
7.0
0.6
11.0
1.6
2
1.0
min
typ
max
1
1
200
GHz
pF
dB
dB
Unit
µA
µA
*
h
FE
Rank classification
Rank
h
FE
Marking Symbol
Q
80 ~ 115
HTQ
R
95 ~ 155
HTR
S
135 ~ 200
HTS
0 to 0.1
s
Absolute Maximum Ratings
(Ta=25˚C)
0.2±0.1
+0.1
1
Transistor
P
C
— Ta
150
60
Ta=25˚C
125
50
50
2SC5379
I
C
— V
CE
60
V
CE
=5V
I
C
— V
BE
Collector power dissipation P
C
(mW)
Collector current I
C
(mA)
Collector current I
C
(mA)
100
40
I
B
=300µA
30
250µA
200µA
20
150µA
100µA
10
50µA
40
Ta=75˚C
30
25˚C
–25˚C
75
50
20
25
10
0
0
20
40
60
80 100 120 140 160
0
0
1
2
3
4
5
6
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
100
30
10
3
1
0.3
0.1
0.03
0.01
0.1
I
C
/I
B
=10
240
h
FE
— I
C
10
V
CE
=5V
f
T
— I
C
V
CE
=5V
Forward current transfer ratio h
FE
200
Ta=75˚C
160
25˚C
120
–25˚C
80
Transition frequency f
T
(GHz)
30
100
8
6
4
Ta=75˚C
25˚C
–25˚C
40
2
0.3
1
3
10
30
100
0
0.1
0
0.3
1
3
10
0
4
8
12
16
20
Collector current I
C
(mA)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
— V
CB
1.0
15
| S
21e
|
2
— I
C
3.0
NF — I
C
V
CE
=5V
f=1GHz
Ta=25˚C
Collector output capacitance C
ob
(pF)
0.8
Forward transfer gain |S21e|
2
(dB)
12
2.4
0.6
9
Noise figure NF (dB)
V
CE
=5V
f=1GHz
Ta=25˚C
0
4
8
12
16
20
1.8
0.4
6
1.2
0.2
3
0.6
0
0
2
4
6
8
10
0
0
0
2
4
6
8
10
Collector to base voltage V
CB
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
2
Integrated technical exchanges
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