MH4V725CWJ-7 datasheet, PDF - EEWORLD Datasheet

MH4V725CWJ-7: DescriptionDRAM Module, 4MX72, 70ns, CMOS; Categorystorage storage; File Size185KB，1 Pages; ManufacturerMitsubishi; Websitehttp://www.mitsubishielectric.com/semiconductors/

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MH4V725CWJ-7 Overview

DRAM Module, 4MX72, 70ns, CMOS

Parameter Name	Attribute value
package instruction	DIMM, DIMM168
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	70 ns
I/O type	COMMON
JESD-30 code	R-XDMA-N168
memory density	301989888 bit
Memory IC Type	DRAM MODULE
memory width	72
Number of functions	1
Number of ports	1
Number of terminals	168
word count	4194304 words
character code	4000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	4MX72
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM168
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	2048
self refresh	NO
Maximum standby current	0.009 A
Maximum slew rate	1.89 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL
Base Number Matches	1

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