WED3DG6432V10D1SG datasheet, PDF

WED3DG6432V10D1SG: DescriptionSynchronous DRAM Module, 32MX64, 6ns, CMOS, ROHS COMPLIANT, SODIMM-144; Categorystorage storage; File Size245KB，9 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com; Environmental Compliance

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WED3DG6432V10D1SG Overview

Synchronous DRAM Module, 32MX64, 6ns, CMOS, ROHS COMPLIANT, SODIMM-144

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	SODIMM
package instruction	,
Contacts	144
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	6 ns
Other features	AUTO/SELF REFRESH
JESD-30 code	R-XZMA-N144
memory density	2147483648 bit
Memory IC Type	SYNCHRONOUS DRAM MODULE
memory width	64
Number of functions	1
Number of ports	1
Number of terminals	144
word count	33554432 words
character code	32000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	32MX64
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
self refresh	YES
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal location	ZIG-ZAG
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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