S3G datasheet, PDF - EEWORLD Datasheet

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S3G: Description3 A, 400 V, SILICON, RECTIFIER DIODE; Categorysemiconductor Discrete semiconductor; File Size50KB，2 Pages; ManufacturerMIC; Websitehttp://www.cnmic.com/

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S3G Overview

3 A, 400 V, SILICON, RECTIFIER DIODE

S3G Parametric

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
state	DISCONTINUED
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	C BEND
terminal coating	tin lead
Terminal location	pair
Packaging Materials	Plastic/Epoxy
structure	single
Diode component materials	silicon
Diode type	rectifier diode
application	GENERAL PURPOSE
Phase	1
Maximum repetitive peak reverse voltage	400 V
Maximum average forward current	3 A
Maximum non-repetitive peak forward current	100 A

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SURFACE MOUNT RECTIFIER

S3A THRU S3M

FEATURES

•

VOLTAGE RANGE

CURRENT

50 to 1000 Volts

3.0 Ampere

DO-214AB(SMC)

Plastic package has underwrites laboratory flammability

Classification 94V-0

For surface mounted applications

Low profile package

Built-in strain relief, ideal for automated placement

Glass Passivated chip junction

High temperature soldering:

250℃/10 second at terminals

MECHANICAL DATA

•

Case: JEDED DO-214AA molded plastic over glass passivated chip

Terminals: Solder plated, Solderable per MIL-STD-750, method 2026

Polarity: Color band denotes cathode end

Weight: 0.007ounce, 0.25 gram

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

•

Ratings at 25℃ ambient temperature unless otherwise specified

SYMBOLS

V

RRM

V

RMS

V

DC

I

(AV)

I

FSM

V

F

I

R

T

rr

C

J

R

θJL

R

θJA

T

J

,T

STG

S3A

50

35

50

S3B

100

70

100

S3D

200

140

200

S3G

400

280

400

3.0

100

1.15

10.0

250

2.5

60

47

13

-55 to +150

S3J

600

420

600

S3K

800

560

800

S3M

1000

700

1000

UNIT

Volts

Amps

Volts

µA

µs

pF

℃

/W

℃

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

at T

L

=100℃ (NOTE 3)

Peak Forward Surge Current

8.3ms single half sine wave superimposed on

rated load (JEDEC method) T

L

=100℃

Maximum Instantaneous Forward Voltage at 3.0A

Maximum DC Reverse Current

at rated DC Blocking Voltage

T

A

= 25℃

T

A

= 125℃

Typical Reverse Recovery Time (NOTE 1)

Typical junction capacitance (NOTE 2)

Typical Thermal Resistance (NOTE 3)

Operating and Storage Temperature Range

Notes:

1. Reverse recovery test conditions: I

F

=0.5A, I

R

=1.0A, Irr =0.25A

2. Measured at 1.0MHz and applied reverse voltage of 4.0 Volts

3. Thermal resistance from Junction to ambient and from junction to lead mounted on

P.C.B.with 0.3×0.3″(8.0

×

8.0mm) copper pad areas.

E-mail:

sales@cnmic.com

Web Site: www.cnmic.com

S3G Related Products

	S3G	S3A	S3J	S3K	S3M
Description	3 A, 400 V, SILICON, RECTIFIER DIODE	3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AB	RECTIFIER DIODE	3 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AB	3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AB
Number of terminals	2	2	-	-	2
Number of components	1	1	-	-	1
state	DISCONTINUED	ACTIVE	ACTIVE	-	ACTIVE
packaging shape	Rectangle	Rectangle	-	-	Rectangle
Package Size	SMALL OUTLINE	SMALL OUTLINE	-	-	SMALL OUTLINE
surface mount	Yes	Yes	-	-	Yes
Terminal form	C BEND	C BEND	-	-	C BEND
terminal coating	tin lead	tin lead	-	-	tin lead
Terminal location	pair	pair	-	-	pair
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy	-	-	Plastic/Epoxy
structure	single	single	-	-	single
Diode component materials	silicon	silicon	-	-	silicon
Diode type	rectifier diode	rectifier diode	RECTIFIER DIODE	-	rectifier diode
application	GENERAL PURPOSE	GENERAL PURPOSE	-	-	GENERAL PURPOSE
Phase	1	1	-	-	1
Maximum repetitive peak reverse voltage	400 V	50 V	-	-	1000 V
Maximum average forward current	3 A	3 A	-	-	3 A
Maximum non-repetitive peak forward current	100 A	100 A	-	-	100 A

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