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SMT810N-25

Description
2.6mm, 1 ELEMENT, INFRARED LED, 810nm, ROHS COMPLIANT, SMD, 4 PIN
CategoryLED optoelectronic/LED    photoelectric   
File Size120KB,3 Pages
ManufacturerEpitex Inc
Websitehttp://www.epitex.com
Download Datasheet Parametric Compare View All

SMT810N-25 Overview

2.6mm, 1 ELEMENT, INFRARED LED, 810nm, ROHS COMPLIANT, SMD, 4 PIN

SMT810N-25 Parametric

Parameter NameAttribute value
package instructionROHS COMPLIANT, SMD, 4 PIN
Reach Compliance Codeunknown
ConfigurationSINGLE
Maximum forward current0.1 A
Number of functions1
Maximum operating temperature80 °C
Minimum operating temperature-20 °C
Optoelectronic device typesINFRARED LED
Nominal output power22 mW
peak wavelength810 nm
shapeROUND
size2.6 mm
Base Number Matches1
epitex
Opto-Device & Custom LED
TOP IR LED SMT810N-25
Lead ( Pb ) Free Product – RoHS Compliant
SMT810N-25
High Performance Infrared TOP LED with Lens
SMT810N-25 consists of an AlGaAs LED mounted on the lead frame as TOP LED package
with plastic ball lens and is 44mW typical of output power and 60mW/sr of radiant Intensity.
It emits a spectral band of radiation at 810nm.
♦Outer
dimension (Unit:mm)
♦Specifications
1) Product Name
TOP IR LED
2) Type No.
SMT810N-25
3) Chip
(1) Chip Material
AlGaAs
(2) Chip Dimension
400um*400nm
(3) Peak Wavelength 810nm typ.
4) Package
(1) Lead Frame Die
Silver Plated
(2) Package Resin
PPA Resin
(3) Lens
Epoxy Resin
(4) Diameter
Φ2.6mm
♦Absolute
Maximum Rating
Item
Symbol Maximum Rated Value
Unit
Ambient Temperature
Power Dissipation
P
D
160
mW
Ta=25°C
Forward Current
I
F
100
mA
Ta=25°C
Pulse Forward Current
I
FP
1000
mA
Ta=25°C
Reverse Voltage
V
R
5
V
Ta=25°C
Junction Temperature
T
J
100
°C
Thermal Resistance
R
thjp
200
K/W
Operating Temperature
T
OPR
-20 ~ +80
°C
-30 ~ +80
°C
Storage Temperature
T
STG
Soldering Temperature
T
SOL
255
°C
Pulse Forward Current condition: Duty=1% and Pulse Width=10us.
Soldering condition: Soldering condition must be completed within 10 seconds at 255°C
♦Electro-Optical
Characteristics [Ta=25°C]
Item
Symbol
Condition
Minimum Typical Maximum Unit
I
F
=50mA DC
1.50
1.70
Forward Voltage
V
F
V
I
F
=100mA, tp=20ms
1.55
1.90
Reverse Current
I
R
V
R
=5V
10
uA
I
F
=50mA DC
18.0
22.0
Total Radiated Power
P
O
mW
I
F
=100mA, tp=20ms
44.0
I
F
=50mA
30.0
mW/sr
Radiant Intensity
I
E
60.0
I
F
=100mA, tp=20ms
Peak Wavelength
800
810
820
nm
I
F
=50mA
λ
P
Half Width
I
F
=50mA
40
nm
∆λ
Viewing Half Angle
I
F
=50mA
±20
deg.
θ
1/2
Rise Time
tr
F
=50mA
25
ns
Fall Time
tf
F
=50mA
20
ns
Total Radiated Power is measured by Photodyne #500
Radiant Intensity is measured by Tektronix J-6512.
EPITEX INC.: 66-3 Minami-Kawabe Cho, Higashi-Kujyo, Minami-Ku, Kyoto, Japan
Tel: ++81-75-682-2338
Fax: ++81-75-682-2267
http://www.epitex.com
e-mail: sales-dep@epitex.com

SMT810N-25 Related Products

SMT810N-25
Description 2.6mm, 1 ELEMENT, INFRARED LED, 810nm, ROHS COMPLIANT, SMD, 4 PIN
package instruction ROHS COMPLIANT, SMD, 4 PIN
Reach Compliance Code unknown
Configuration SINGLE
Maximum forward current 0.1 A
Number of functions 1
Maximum operating temperature 80 °C
Minimum operating temperature -20 °C
Optoelectronic device types INFRARED LED
Nominal output power 22 mW
peak wavelength 810 nm
shape ROUND
size 2.6 mm
Base Number Matches 1
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