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SMT810

Description
2.4mm, 1 ELEMENT, INFRARED LED, 810nm, ROHS COMPLIANT, SMD, 2 PIN
CategoryLED optoelectronic/LED    photoelectric   
File Size127KB,3 Pages
ManufacturerEpitex Inc
Websitehttp://www.epitex.com
Download Datasheet Parametric Compare View All

SMT810 Overview

2.4mm, 1 ELEMENT, INFRARED LED, 810nm, ROHS COMPLIANT, SMD, 2 PIN

SMT810 Parametric

Parameter NameAttribute value
package instructionROHS COMPLIANT, SMD, 2 PIN
Reach Compliance Codeunknown
ConfigurationSINGLE
Maximum forward current0.1 A
Number of functions1
Maximum operating temperature80 °C
Minimum operating temperature-20 °C
Optoelectronic device typesINFRARED LED
Nominal output power18 mW
peak wavelength810 nm
shapeROUND
size2.4 mm
Base Number Matches1
epitex
SMT810
Specifications
1) Product Name
2) Type No.
3) Chip
(1) Chip Material
(2) Peak Wavelength
4) Package
(1) Lead Frame Die
(2) Package Resin
(3) Lens
Opto-Device & Custom LED
TOP IR LED SMT810
Lead ( Pb ) Free Product – RoHS Compliant
High Performance Infrared TOP IR LED
SMT810 consists of an AlGaAs LED mounted on the lead frame as TOP LED package
and is 10mW typical of output power.
Outer
dimension(Unit:mm)
It emits a spectral band of radiation at 810nm.
TOP IR LED
SMT810
AlGaAs
810nm typ.
Silver Plated
PPA Resin
Epoxy Resin
Absolute
Maximum Rating
Item
Symbol
Maximum Rated Value Unit
Ambient Temperature
Power Dissipation
P
D
190
mW
Ta=25°C
Forward Current
I
F
100
mA
Ta=25°C
Pulse Forward Current
I
FP
500
mA
Ta=25°C
Reverse Voltage
V
R
5
V
Ta=25°C
Operating Temperature
T
OPR
-20 ~ +80
°C
Storage Temperature
-30 ~ +80
°C
T
STG
Soldering Temperature
T
SOL
250
°C
Pulse Forward Current condition: Duty=1% and Pulse Width=10us.
Soldering condition: Soldering condition must be completed within 5 seconds at 250°C
Electro-Optical
Characteristics [Ta=25°C]
Item
Symbol Condition Minimum
Forward Voltage
V
F
I
F
=50mA
Reverse Current
I
R
V
R
=5V
Total Radiated Power
P
O
I
F
=50mA
10.0
Radiant Intensity
I
E
I
F
=50mA
5.0
I
F
=50mA
Peak Wavelength
P
Half Width
I
F
=50mA

Viewing Half Angle
I
F
=50mA


Rise Time
tr
F
=50mA
Fall Time
tf
F
=50mA
Total Radiated Power is measured by Photodyne #500
Radiant Intensity is measured by Tektronix J-6512.
Typical
1.60
18.0
8.0
810
40
±55
60
40
Maximum
1.80
10
Unit
V
uA
mW
mW/sr
nm
nm
deg.
ns
ns
EPITEX INC.: 66-3 Minami-Kawabe Cho, Higashi-Kujyo, Minami-Ku, Kyoto, Japan
Tel: ++81-75-682-2338
Fax: ++81-75-682-2267
e-mail: sales-dep@epitex.com
http://www.epitex.com

SMT810 Related Products

SMT810
Description 2.4mm, 1 ELEMENT, INFRARED LED, 810nm, ROHS COMPLIANT, SMD, 2 PIN
package instruction ROHS COMPLIANT, SMD, 2 PIN
Reach Compliance Code unknown
Configuration SINGLE
Maximum forward current 0.1 A
Number of functions 1
Maximum operating temperature 80 °C
Minimum operating temperature -20 °C
Optoelectronic device types INFRARED LED
Nominal output power 18 mW
peak wavelength 810 nm
shape ROUND
size 2.4 mm
Base Number Matches 1

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