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DIM125CHS06-S000

Description
Insulated Gate Bipolar Transistor, 125A I(C), 600V V(BR)CES, N-Channel, C, MODULE-7
CategoryDiscrete semiconductor    The transistor   
File Size137KB,8 Pages
ManufacturerDynex
Websitehttp://www.dynexsemi.com/
Environmental Compliance  
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DIM125CHS06-S000 Overview

Insulated Gate Bipolar Transistor, 125A I(C), 600V V(BR)CES, N-Channel, C, MODULE-7

DIM125CHS06-S000 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeMODULE
package instructionFLANGE MOUNT, R-XUFM-X7
Contacts7
Reach Compliance Codeunknown
Shell connectionISOLATED
Maximum collector current (IC)125 A
Collector-emitter maximum voltage600 V
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 codeR-XUFM-X7
Number of components2
Number of terminals7
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsMOTOR CONTROL
Transistor component materialsSILICON
Nominal off time (toff)1150 ns
Nominal on time (ton)560 ns
Base Number Matches1
DIM125CHS06-S000
DIM125CHS06-S000
Half Bridge IGBT Module
Replaces February 2004 version, issue PDS5727-1.2
PDS5727-2.1 June 2004
FEATURES
I
I
I
I
n - Channel
High Switching Speed
Low Forward Voltage Drop
Isolated Base
KEY PARAMETERS
V
CES
(typ)
V
CE(sat)
*
(max)
I
C
(max)
I
C(PK)
600V
2.1V
125A
250A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
I
I
PWM Motor Contro
l
UPS
7(E
2
)
6(G
2
)
The Powerline range of modules includes half bridge,
chopper, bi-directional, dual and single switch configurations
covering voltages from 600V to 3300V and currents up to 3600A.
The DIM125CHS06-S000 is a half bridge 600V n channel
enhancement mode insulated gate bipolar transistor (IGBT)
module. The module is suitable for a variety of medium voltage
applications in motor drives and power conversion.
The IGBT has a wide reverse bias safe operating area
(RBSOA) for ultimate reliability in demanding applications.
These modules incorporate electrically isolated base plates
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
Typical applications include dc motor drives, ac pwm drivesand
ups systems.
1(E1C2)
2(E2)
3(C1)
4(G
1
)
5(E
1
)
Fig. 1 Half bridge circuit diagram
ORDERING INFORMATION
Order as:
DIM125CHS06-S000
Note: When ordering, use complete part number.
Outline type code:
C
(See package details for further information)
Fig. 2 Module outline
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/8
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