SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1436
DESCRIPTION
·With TO-126 package
·Complement to type 2SD2166
·Low collector saturation voltage
APPLICATIONS
·For audio power amplifier applications
PINNING
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
T
a
=25
P
D
Total power dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
5
150
-55~150
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-30
-20
-6
-5
-10
1.5
W
UNIT
V
V
V
A
A
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Collector output capacitance
CONDITIONS
I
C
=-50µA ;I
E
=0
I
C
=-1mA ;I
B
=0
I
E
=-50µA ;I
C
=0
I
C
=-4A ;I
B
=-0.1A
V
CB
=-20V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-0.5A ; V
CE
=-2V
I
E
=50mA ; V
CE
=-6V; f=30MHz
I
E
=0 ; V
CB
=-20V; f=1MHz
180
MIN
-30
-20
-6
2SB1436
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE
f
T
C
ob
TYP.
MAX
UNIT
V
V
V
-1.0
-0.5
-0.5
390
120
60
V
µA
µA
MHz
pF
2
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