INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
2N4913
DESCRIPTION
·Low
Collector Saturation Voltage-
: V
CE(sat)
= 1.5V(Max.)@ I
C
= 5A
·DC
Current Gain-
: h
FE
= 25-100 @I
C
= 2.5A
·Complement
to Type 2N4904
APPLICATIONS
·Designed
for general purpose use in power amplifier and
switching circuits.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation@T
C
=25℃
Junction Temperature
Storage Temperature
VALUE
40
40
5
5
1
87.5
200
-65~200
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
2.0
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2N4913
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 200mA ; I
B
= 0
40
V
V
CE
(sat)-1
Collector-Emitter Saturation Voltage
I
C
= 2.5A; I
B
= 0.25A
1.0
V
V
CE
(sat)-2
Collector-Emitter Saturation Voltage
I
C
= 5A; I
B
= 1A
1.5
V
V
BE(
on
)
I
CEO
Base-Emitter On Voltage
I
C
= 2.5A; V
CE
= 2V
1.4
V
Collector Cutoff Current
V
CE
= 40V; I
B
= 0
1.0
mA
I
CBO
Collector Cutoff Current
V
CB
= 40V; I
E
= 0
V
CE
= 40V; V
BE(
off
)
= -1.5V
V
CE
= 40V; V
BE(
off
)
= -1.5V, T
C
=150℃
V
EB
=-5V; I
C
= 0
0.1
0.1
2.0
1.0
mA
I
CEV
Collector Cutoff Current
mA
I
EBO
Emitter Cutoff Current
mA
h
FE-1
DC Current Gain
I
C
= 2.5A; V
CE
= 2V
25
100
h
FE-2
DC Current Gain
I
C
= 5A; V
CE
= 2V
7
f
T
Current-Gain—Bandwidth Product
I
C
= 1A; V
CE
= 10V; f
test
= 1.0MHz
4
MHz
isc Website：www.iscsemi.cn
2
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