MPS6725 datasheet, PDF - EEWORLD Datasheet

MPS6725: Description50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226; CategoryDiscrete semiconductor The transistor; File Size62KB，1 Pages; ManufacturerTexas Instruments; Websitehttp://www.ti.com.cn/

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50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown
Maximum collector current (IC)	1 A
Collector-based maximum capacity	10 pF
Collector-emitter maximum voltage	50 V
Configuration	DARLINGTON
Minimum DC current gain (hFE)	4000
JEDEC-95 code	TO-226
JESD-30 code	O-PBCY-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	1 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
VCEsat-Max	1.5 V
Base Number Matches	1

	MPS6725	MPS6724
Description	50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226	40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226
Is it Rohs certified?	incompatible	incompatible
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown	unknown
Maximum collector current (IC)	1 A	1 A
Collector-based maximum capacity	10 pF	10 pF
Collector-emitter maximum voltage	50 V	40 V
Configuration	DARLINGTON	DARLINGTON
Minimum DC current gain (hFE)	4000	4000
JEDEC-95 code	TO-226	TO-226
JESD-30 code	O-PBCY-T3	O-PBCY-T3
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN
Maximum power dissipation(Abs)	1 W	1 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz
VCEsat-Max	1.5 V	1.5 V
Base Number Matches	1	1

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