Power Field-Effect Transistor, 1.6A I(D), 800V, 7.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254Z, 3 PIN
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Parts packaging code | TO-254Z |
package instruction | FLANGE MOUNT, S-MSFM-T3 |
Contacts | 3 |
Reach Compliance Code | unknown |
Other features | CUSTOM BENT LEAD OPTIONS ARE AVAILABLE |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 800 V |
Maximum drain current (ID) | 1.6 A |
Maximum drain-source on-resistance | 7.8 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | S-MSFM-T3 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Package body material | METAL |
Package shape | SQUARE |
Package form | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL |
Maximum power consumption environment | 50 W |
Maximum pulsed drain current (IDM) | 6.4 A |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
Maximum time at peak reflow temperature | NOT SPECIFIED |
Transistor component materials | SILICON |
Maximum off time (toff) | 152 ns |
Maximum opening time (tons) | 51 ns |
Base Number Matches | 1 |