Power Field-Effect Transistor, 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PAK1, 3 PIN
Parameter Name | Attribute value |
package instruction | CHIP CARRIER, R-CBCC-N3 |
Contacts | 3 |
Reach Compliance Code | unknown |
Configuration | SINGLE |
Minimum drain-source breakdown voltage | 100 V |
Maximum drain-source on-resistance | 0.2 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-CBCC-N3 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Package body material | CERAMIC, METAL-SEALED COFIRED |
Package shape | RECTANGULAR |
Package form | CHIP CARRIER |
Polarity/channel type | P-CHANNEL |
Maximum pulsed drain current (IDM) | 19 A |
Certification status | Not Qualified |
surface mount | YES |
Terminal form | NO LEAD |
Terminal location | BOTTOM |
Transistor component materials | SILICON |
Base Number Matches | 1 |