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DT310N24KOF

Description
Silicon Controlled Rectifier, 310000mA I(T), 2400V V(RRM)
CategoryAnalog mixed-signal IC    Trigger device   
File Size413KB,13 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

DT310N24KOF Overview

Silicon Controlled Rectifier, 310000mA I(T), 2400V V(RRM)

DT310N24KOF Parametric

Parameter NameAttribute value
Parts packaging codeMODULE
Contacts5
Reach Compliance Codecompliant
Maximum DC gate trigger current250 mA
Maximum DC gate trigger voltage1.5 V
Quick connection descriptionG-GR
Description of screw terminalsA-K-AK
Maximum holding current300 mA
Maximum leakage current80 mA
On-state non-repetitive peak current9000 A
Maximum on-state voltage2.22 V
Maximum on-state current310000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Repeated peak reverse voltage2400 V
Base Number Matches1
N
Netz-Thyristor-Modul
Phase Control Thyristor Module
Datenblatt / Data sheet
TT310N
TT310N
Kenndaten
TT310N...-A
TD310N
DT310N
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung T
vj
= -40°C... T
vj max
repetitive peak forward off-state and reverse voltages
Vorwärts-Stoßspitzensperrspannung
non-repetitive peak forward off-state voltage
Rückwärts-Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
T
C
= 85°C
T
C
= 58°C
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
DIN IEC 747-6 f = 50 Hz,
i
GM
= 1,25 A, di
G
/dt = 1,25 A/µs
T
vj
= T
vj max
, v
D
= 0,67 V
DRM
6.Kennbuchstabe / 6
th
letter C
6.Kennbuchstabe / 6
th
letter F
T
vj
= -40°C... T
vj max
T
vj
= +25°C... T
vj max
Elektrische Eigenschaften
V
DRM
,V
RRM
2000
2400
V
DSM
V
RSM
I
TRMSM
I
TAVM
I
TSM
I²t
(di
T
/dt)
cr
(dv
D
/dt)
cr
2000
2400
2100
2500
2200 V
2600 V
2200 V
2600 V
2300 V
2700 V
700 A
310 A
446 A
10000 A
9000 A
500000 A²s
405000 A²s
120 A/µs
500 V/µs
1000 V/µs
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse current
Zündverzug
gate controlled delay time
T
vj
= T
vj max
, i
T
= 1300 A
T
vj
= T
vj max
T
vj
= T
vj max
T
vj
= 25°C, v
D
= 6 V
T
vj
= 25°C, v
D
= 6 V
T
vj
= T
vj max
, v
D
= 6 V
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= 25°C, v
D
= 6 V, R
A
= 5
T
vj
= 25°C, v
D
= 6 V, R
GK
10
i
GM
= 1,25 A, di
G
/dt = 1,25 A/µs,
t
g
= 20 µs
T
vj
= T
vj max
v
D
= V
DRM
, v
R
= V
RRM
DIN IEC 747-6 T
vj
= 25 °C,
i
GM
= 1,25 A, di
G
/dt = 1,25 A/µs
v
T
V
(TO)
r
T
I
GT
V
GT
I
GD
V
GD
I
H
I
L
max.
2,22 V
1 V
0,86 mΩ
max.
max.
max.
max.
max.
max.
max.
250 mA
1,5 V
10 mA
5 mA
0,2 V
300 mA
1500 mA
i
D
, i
R
t
gd
max.
max.
80 mA
3,3 µs
prepared by: C.Drilling
approved by: J. Novotny
date of publication:
revision:
18.12.02
1
BIP AC / 22 Nov 1994, A. Rüther
A 72/94
Seite/page
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