LTC4440-5
High Speed, High Voltage,
High Side Gate Driver
FEATURES
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DESCRIPTIO
Wide Operating V
IN
Range: Up to 60V
Rugged Architecture Tolerant of 80V V
IN
Transients
Powerful 1.85Ω Driver Pull-Down (with 6V Supply)
Powerful 1.1A Peak Current Driver Pull-Up
(with 6V Supply)
7ns Fall Time Driving 1000pF Load
10ns Rise Time Driving 1000pF Load
Drives Standard Threshold MOSFETs
TTL/CMOS Compatible Inputs with Hysteresis
Input Thresholds are Independent of Supply
Undervoltage Lockout
Low Profile (1mm) SOT-23 (ThinSOT
TM
) and
Thermally Enhanced 8-Pin MSOP Packages
The LTC
®
4440-5 is a high frequency high side N-channel
MOSFET gate driver that is designed to operate in applica-
tions with V
IN
voltages up to 60V. The LTC4440-5 can also
withstand and continue to function during 80V V
IN
tran-
sients. The powerful driver capability reduces switching
losses in MOSFETs with high gate capacitances. The
LTC4440-5’s pull-up has a peak output current of 1.1A and
its pull-down has an output impedance of 1.85Ω.
The LTC4440-5 features supply independent TTL/CMOS
compatible input thresholds with 350mV of hysteresis.
The input logic signal is internally level-shifted to the
bootstrapped supply, which may function at up to 95V
above ground.
The LTC4440-5 is optimized for driving (5V) logic level
FETs and contains an undervoltage lockout circuit that
disables the external MOSFET when activated.
The LTC4440-5 is available in the low profile (1mm)
SOT-23 or a thermally enhanced 8-lead MSOP package.
PARAMETER
Max Operating TS
Absolute Max TS
MOSFET Gate Drive
V
CC
UV
+
V
CC
UV
–
LTC4440-5
60V
80V
4V to 15V
3.2V
3.04V
LTC4440
80V
100V
8V to 15V
6.3V
6.0V
APPLICATIO S
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Telecommunications Power Systems
Distributed Power Architectures
Server Power Supplies
High Density Power Modules
General Purpose Low-Side Driver
, LTC and LT are registered trademarks of Linear Technology Corporation. ThinSOT is a
trademark of Linear Technology Corporation. All other trademarks are the property of their
respective owners. Protected by U.S. Patents including 6677210.
TYPICAL APPLICATIO
V
IN
36V TO 60V
V
CC
4V TO 15V
LTC4440-5
V
CC
BOOST
INP
GND
TG
TS
Synchronous Phase-Modulated Full-Bridge Converter
LTC4440-5 Driving a 1000pF Capacitive Load
TG-TS
2V/DIV
LTC4440-5
LTC3722-1
V
CC
BOOST
INP
GND
TG
TS
4440 TA01
INP
2V/DIV
•
•
50ns/DIV
V
CC
= BOOST-TS = 5V
4440-5 TA02
U
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LTC4440-5
ABSOLUTE
MAXIMUM
RATINGS
Supply Voltage
V
CC
....................................................... – 0.3V to 15V
BOOST – TS ......................................... – 0.3V to 15V
INP Voltage ............................................... – 0.3V to 15V
BOOST Voltage (Continuous) ................... – 0.3V to 85V
BOOST Voltage (100ms) .......................... – 0.3V to 95V
TS Voltage (Continuous) ............................. – 5V to 70V
PACKAGE/ORDER INFORMATION
TOP VIEW
INP
GND
V
CC
GND
1
2
3
4
8
7
6
5
TS
TG
BOOST
NC
V
CC
1
GND 2
INP 3
TOP VIEW
6 BOOST
5 TG
4 TS
9
MS8E PACKAGE
8-LEAD PLASTIC MSOP
T
JMAX
= 125°C,
θ
JA
= 40°C/W (NOTE 4)
EXPOSED PAD IS GND (PIN 9), MUST BE SOLDERED TO PCB
ORDER PART NUMBER
LTC4440EMS8E-5
MS8E PART MARKING
LTBRG
Order Options
Tape and Reel: Add #TR
Lead Free: Add #PBF Lead Free Tape and Reel: Add #TRPBF
Lead Free Part Marking:
http://www.linear.com/leadfree/
Consult LTC Marketing for parts specified with wider operating temperature ranges.
ELECTRICAL CHARACTERISTICS
SYMBOL
I
VCC
PARAMETER
DC Supply Current
Normal Operation
UVLO
Undervoltage Lockout Threshold
CONDITIONS
Main Supply (V
CC
)
The
●
denotes specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C. V
CC
= V
BOOST
= 6V, V
TS
= GND = 0V, unless otherwise noted.
MIN
TYP
MAX
UNITS
INP = 0V
V
CC
< UVLO Threshold (Falling) – 0.1V
V
CC
Rising
V
CC
Falling
Hysteresis
●
●
UVLO
Bootstrapped Supply (BOOST – TS)
I
BOOST
DC Supply Current
Normal Operation
INP = 0V
INP = 6V
INP Ramping High
INP Ramping Low
●
●
Input Signal (INP)
V
IH
V
IL
V
IH
– V
IL
I
INP
High Input Threshold
Low Input Threshold
Input Voltage Hysteresis
Input Pin Bias Current
1.2
0.8
1.6
1.25
0.350
±0.01
±2
2
1.6
V
V
V
µA
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U
U
W
W W
U
W
(Note 1)
TS Voltage (100ms) ..................................... – 5V to 80V
Peak Output Current < 1µs (TG) ............................... 4A
Operating Ambient Temperature Range
(Note 2) .............................................. – 40°C to 85°C
Junction Temperature (Note 3) ............................ 125°C
Storage Temperature Range ................. – 65°C to 150°C
Lead Temperature (Soldering, 10 sec).................. 300°C
S6 PACKAGE
6-LEAD PLASTIC SOT-23
T
JMAX
= 125°C,
θ
JA
= 230°C/W
ORDER PART NUMBER
LTC4440ES6-5
S6 PART MARKING
LTBRF
200
18
2.75
2.60
3.20
3.04
160
325
40
3.65
3.50
µA
µA
V
V
mV
0
310
450
µA
µA
LTC4440-5
ELECTRICAL CHARACTERISTICS
SYMBOL
V
OH
V
OL
I
PU
R
DS
t
r
t
f
t
PLH
t
PHL
PARAMETER
High Output Voltage
Low Output Voltage
Peak Pull-Up Current
Output Pull-Down Resistance
Output Rise Time
Output Fall Time
Output Low-High Propagation Delay
Output High-Low Propagation Delay
Output Gate Driver (TG)
The
●
denotes specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C. V
CC
= V
BOOST
= 6V, V
TS
= GND = 0V, unless otherwise noted.
CONDITIONS
I
TG
= –10mA, V
OH
= V
BOOST
– V
TG
I
TG
= 100mA
●
●
●
MIN
TYP
0.7
185
MAX
UNITS
V
275
2.75
mV
A
Ω
ns
ns
ns
ns
0.75
1.1
1.85
10
100
7
70
Switching Timing
10% – 90%, C
L
= 1nF
10% – 90%, C
L
= 10nF
10% – 90%, C
L
= 1nF
10% – 90%, C
L
= 10nF
●
●
35
33
65
65
ns
ns
Note 1:
Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2:
The LTC4440-5 is guaranteed to meet performance specifications
from 0°C to 85°C. Specifications over the –40°C to 85°C operating
temperature range are assured by design, characterization and correlation
with statistical process controls.
Note 3:
T
J
is calculated from the ambient temperature T
A
and power
dissipation PD according to the following formula:
T
J
= T
A
+ (PD •
θ
JA
°C/W)
Note 4:
Failure to solder the exposed back side of the MS8E package to
the PC board will result in a thermal resistance much higher than 40°C/W.
TYPICAL PERFOR A CE CHARACTERISTICS
V
CC
Supply Quiescent Current
vs Voltage
350
300
QUIESCENT CURRENT (µA)
250
INP = GND
200
INP = V
CC
150
100
50
0
0
10
5
V
CC
SUPPLY VOLTAGE (V)
15
4440-5 G01
300
250
200
150
100
50
0
0
5
10
15
4440-5 G02
OUTPUT (TG-TS) VOLTAGE (mV)
QUIESCENT CURRENT (µA)
U W
BOOST-TS Supply Quiescent
Current vs Voltage
400
350
INP = V
CC
Output Low Voltage (V
OL
)
vs Supply Voltage
300
250
200
150
100
50
0
3
4
BOOST-TS SUPPLY VOLTAGE (V)
5 6 7 8 9 10 11 12 13 14 15
BOOST-TS SUPPLY VOLTAGE (V)
4440-5 G03
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LTC4440-5
TYPICAL PERFOR A CE CHARACTERISTICS
Output High Voltage (V
OH
)
vs Supply Voltage
16
14
2.0
1.8
1.6
V
IH
V
IL
HIGH OUTPUT VOLTAGE (V)
INPUT THRESHOLD (V)
12
I
TG
= 1mA
10
8
6
4
2
0
4
5
6 7 8 9 10 11 12 13 14 15
BOOST-TS SUPPLY VOLTAGE (V)
4440-5 G04
I
TG
= 10mA
I
TG
= 100mA
V
CC
Supply Current
vs Temperature
250
3.5
INP = GND
3.4
QUIESCENT CURRENT (µA)
RISING
3.2
3.1
3.0
2.9
2.8
2.7
2.6
FALLING
QUIESCENT CURRENT (µA)
200
INP = V
CC
UVLO THRESHOLD VOLTAGE (V)
150
100
50
0
–55 –35 –15
5 25 45 65 85 105 125
TEMPERATURE (°C)
4440-5 G08
Input (INP) Threshold
vs Temperature
2.0
1.8
380
370
HYSTERESIS (V
IH
-V
IL
) (mV)
INPUT THRESHOLD (V)
1.6
1.4
PEAK CURRENT (A)
V
IH
V
IL
1.2
1.0
0.8
–55 –35 –15
5 25 45 65 85 105 125
TEMPERATURE (°C)
4440-5 G11
4
U W
Input (INP) Thresholds
vs Supply Voltage
INPUT
(INP)
5V/DIV
2MHz Operation
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
4
5
6
OUTPUT
(TG)
5V/DIV
250ns/DIV
V
CC
= BOOST-TS = 12V
7 8 9 10 11 12 13 14 15
V
CC
SUPPLY VOLTAGE (V)
4440-5 G05
4440-5 G07
V
CC
Undervoltage Lockout
Thresholds vs Temperature
400
350
300
250
200
150
100
50
5 25 45 65 85 105 125
TEMPERATURE (°C)
4440-5 G09
BOOST-TS Quiescent Current
vs Temperature
3.3
2.5
–55 –35 –15
0
–55 –35 –15
5 25 45 65 85 105 125
TEMPERATURE (°C)
4440-5 G10
Input Threshold Hysteresis
vs Temperature
3.5
3.0
Peak Driver (TG) Pull-Up Current
vs Temperature
BOOST-TS = 15V
360
350
340
330
320
310
300
–55 –35 –15
5 25 45 65 85 105 125
TEMPERATURE (°C)
4440-5 G12
2.5
BOOST-TS = 12V
2.0
1.5
1.0
0.5
0
–55 –35 –15
BOOST-TS = 4V
BOOST-TS = 6V
5 25 45 65 85 105 125
TEMPERATURE (°C)
4440-5 G13
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LTC4440-5
TYPICAL PERFOR A CE CHARACTERISTICS
Output Driver Pull-Down
Resistance vs Temperature
3.0
2.5
PROPAGATION DELAY (ns)
2.0
BOOST-TS = 4V
BOOST-TS = 6V
R
DS
(Ω)
1.5
1.0
0.5
0
–55 –35 –15
5 25 45 65 85 105 125
TEMPERATURE (°C)
4440-5 G14
Driving a 3300pF Capacitive Load
TG-TS
2V/DIV
INP
2V/DIV
4440-5 G16
50ns/DIV
V
CC
= BOOST-TS = 5V
PI FU CTIO S
SOT-23 Package
V
CC
(Pin 1):
Chip Supply. This pin powers the internal low
side circuitry. A low ESR ceramic bypass capacitor should
be tied between this pin and the GND pin (Pin 2).
GND (Pin 2):
Chip Ground.
INP (Pin 3):
Input Signal. TTL/CMOS compatible input
referenced to GND (Pin 2).
TS (Pin 4):
Top (High Side) source connection or GND if
used in ground referenced applications.
TG (Pin 5):
High Current Gate Driver Output (Top Gate).
This pin swings between TS and BOOST.
BOOST (Pin 6):
High Side Bootstrapped Supply. An exter-
nal capacitor should be tied between this pin and TS
(Pin 4). Normally, a bootstrap diode is connected between
V
CC
(Pin 1) and this pin. Voltage swing at this pin is from
V
CC
– V
D
to V
IN
+ V
CC
– V
D
, where V
D
is the forward voltage
drop of the bootstrap diode.
U W
Propagation Delay vs Temperature
50
45
40
t
PLH
35
t
PHL
30
25
20
–55 –35 –15
V
CC
= BOOST = 6V
BOOST-TS = 15V
BOOST-TS = 12V
5 25 45 65 85 105 125
TEMPERATURE (°C)
4440-5 G15
Driving a 3300pF Capacitive Load
TG-TS
5V/DIV
INP
2V/DIV
50ns/DIV
V
CC
= BOOST-TS = 12V
4440-5 G17
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