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LTC4440_09

Description
High Speed, High Voltage High Side Gate Driver
File Size207KB,12 Pages
ManufacturerLinear ( ADI )
Websitehttp://www.analog.com/cn/index.html
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LTC4440_09 Overview

High Speed, High Voltage High Side Gate Driver

LTC4440
High Speed, High Voltage
High Side Gate Driver
FEATURES
DESCRIPTIO
Wide Operating V
IN
Range: Up to 80V
Rugged Architecture Tolerant of 100V V
IN
Transients
Powerful 1.5Ω Driver Pull-Down
Powerful 2.4A Peak Current Driver Pull-Up
7ns Fall Time Driving 1000pF Load
10ns Rise Time Driving 1000pF Load
Drives Standard Threshold MOSFETs
TTL/CMOS Compatible Inputs with Hysteresis
Input Thresholds are Independent of Supply
Undervoltage Lockout
Low Profile (1mm) SOT-23 (ThinSOT)
TM
and
Thermally Enhanced 8-Pin MSOP Packages
The LTC
®
4440 is a high frequency high side N-channel
MOSFET gate driver that is designed to operate in applica-
tions with V
IN
voltages up to 80V. The LTC4440 can also
withstand and continue to function during 100V V
IN
tran-
sients. The powerful driver capability reduces switching
losses in MOSFETs with high gate capacitances. The
LTC4440’s pull-up has a peak output current of 2.4A and
its pull-down has an output impedance of 1.5Ω.
The LTC4440 features supply independent TTL/CMOS
compatible input thresholds with 350mV of hysteresis.
The input logic signal is internally level-shifted to the
bootstrapped supply, which may function at up to 115V
above ground.
The LTC4440 contains both high side and low side under-
voltage lockout circuits that disable the external MOSFET
when activated.
The LTC4440 is available in the low profile (1mm) SOT-23
and thermally enhanced 8-lead MSOP packages.
, LTC and LT are registered trademarks of Linear Technology Corporation.
ThinSOT is a trademark of Linear Technology Corporation.
Protected by U.S. Patents, including 6677210.
APPLICATIO S
Telecommunications Power Systems
Distributed Power Architectures
Server Power Supplies
High Density Power Modules
TYPICAL APPLICATIO
V
IN
36V TO 72V
100V PEAK TRANSIENT
(ABS MAX)
V
CC
8V TO 15V
Synchronous Phase-Modulated Full-Bridge Converter
LTC4440
V
CC
BOOST
INP
GND
TG
TS
INPUT
(INP)
2V/DIV
LTC4440
V
CC
LTC3722-1
V
CC
BOOST
INP
GND
TG
TS
4440 TA01
OUTPUT
(TG – TS)
5V/DIV
10ns/DIV
4440 F02
U
LTC4440 Driving a 1000pF
Capacitive Load
4440f
U
U
1

LTC4440_09 Related Products

LTC4440_09 LTC4440ES6 LTC4440EMS8E
Description High Speed, High Voltage High Side Gate Driver High Speed, High Voltage High Side Gate Driver High Speed, High Voltage High Side Gate Driver
Brand Name - Linear Technology Linear Technology
Is it Rohs certified? - incompatible incompatible
Maker - Linear ( ADI ) Linear ( ADI )
Parts packaging code - SOT MSOP
package instruction - VSSOP, TSOP6,.11,37 TSSOP, TSSOP8,.19
Contacts - 6 8
Manufacturer packaging code - S6 MS8E
Reach Compliance Code - _compli not_compliant
ECCN code - EAR99 EAR99
high side driver - YES YES
Interface integrated circuit type - BUFFER OR INVERTER BASED MOSFET DRIVER BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 code - R-PDSO-G6 S-PDSO-G8
JESD-609 code - e0 e0
length - 2.9 mm 3 mm
Humidity sensitivity level - 1 1
Number of functions - 1 1
Number of terminals - 6 8
Maximum operating temperature - 85 °C 85 °C
Minimum operating temperature - -40 °C -40 °C
Nominal output peak current - 2.4 A 2.4 A
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code - VSSOP TSSOP
Encapsulate equivalent code - TSOP6,.11,37 TSSOP8,.19
Package shape - RECTANGULAR SQUARE
Package form - SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Peak Reflow Temperature (Celsius) - 235 235
power supply - 12 V 12 V
Certification status - Not Qualified Not Qualified
Maximum seat height - 1 mm 1.1 mm
Nominal supply voltage - 12 V 12 V
surface mount - YES YES
technology - CMOS CMOS
Temperature level - INDUSTRIAL INDUSTRIAL
Terminal surface - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form - GULL WING GULL WING
Terminal pitch - 0.95 mm 0.65 mm
Terminal location - DUAL DUAL
Maximum time at peak reflow temperature - 20 20
Disconnect time - 0.065 µs 0.065 µs
connection time - 0.065 µs 0.065 µs
width - 1.625 mm 3 mm
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