Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-220C package
・Complement
to type MJE15029
・High
transition frequency
・DC
current gain specified to 4.0 Amperes
h
FE
= 40 (Min) @ I
C
= 3.0 Adc
h
FE
= 20 (Min) @ I
C
= 4.0 Adc
APPLICATIONS
・Designed
for use as high–frequency
drivers in audio amplifiers
.
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
MJE15028
・
Absolute maximum ratings (Tc=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
D
PARAMETER
固电
导½
半
ANG
CH
IN
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current
MIC
E SE
Open emitter
Open base
Open collector
CONDITIONS
OR
CT
NDU
O
VALUE
120
120
5
8
16
2
UNIT
V
V
V
A
A
A
W
T
a
=25℃
Total power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
2
50
150
-65~150
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
R
th j-A
PARAMETER
Thermal resistance ; junction to case
Thermal resistance , junction to ambient
MAX
2.5
62.5
UNIT
℃/W
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MJE15028
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-emitter sustaining voltage
I
C
=10mA I
B
=0
120
V
V
CEsat
V
BE
Collector-emitter saturation voltage
I
C
=1A I
B
=0.1A
I
C
=1A ; V
CE
=2V
0.5
V
Base-emitter on voltage
1.0
V
μA
I
CBO
Collector cut-off current
V
CB
=120V; I
E
=0
10
I
CEO
Collector cut-off current
V
CE
=120V; I
B
=0
0.1
mA
μA
I
EBO
Emitter cut-off current
V
EB
=5V; I
C
=0
10
h
FE-1
DC current gain
I
C
=0.1A ; V
CE
=2V
h
FE-2
h
FE-3
DC current gain
固电
DC current gain
导½
半
I
C
=2A ; V
CE
=2V
h
FE-4
f
T
ANG
CH
IN
DC current gain
Transition frequency
MIC
E SE
I
C
=3A ; V
CE
=2V
I
C
=4A ; V
CE
=2V
OR
CT
NDU
O
40
40
20
30
MHz
40
I
C
=0.5A;V
CE
=10V;f=10MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
MJE15028
固电
导½
半
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
Fig.2 Outline dimensions (unindicated tolerance:
±0.10mm)
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
MJE15028
固电
导½
半
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
4
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