2N5885 datasheet, PDF - EEWORLD Datasheet

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2N5885: Description25 A, NPN, Si, POWER TRANSISTOR, TO-3; Categorysemiconductor Discrete semiconductor; File Size167KB，2 Pages; ManufacturerISC; Websitehttp://www.iscsemi.cn/

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2N5885 Overview

25 A, NPN, Si, POWER TRANSISTOR, TO-3

2N5885 Parametric

Parameter Name	Attribute value
Number of terminals	2
Transistor polarity	NPN
Maximum collector current	25 A
Processing package description	TO-3, 2 PIN
state	ACTIVE
packaging shape	ROUND
Package Size	FLANGE MOUNT
Terminal form	PIN/PEG
Terminal location	BOTTOM
Packaging Materials	METAL
structure	SINGLE
Number of components	1
Transistor component materials	SILICON
Transistor type	GENERAL PURPOSE POWER
Minimum DC amplification factor	20
Rated crossover frequency	4 MHz

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INCHANGE Semiconductor

isc

Product Specification

isc

Silicon NPN Power Transistors

DESCRIPTION

·DC

Current Gain-

: h

= 20(Min)@I

= 10A

·Low

Saturation Voltage-

: V

CE(

sat

)= 1.0V(Max)@ I

= 15A

·Complement

to Type 2N5883/5884

APPLICATIONS

·Designed

for general purpose power amplifier and switching

applications.

ABSOLUTE MAXIMUM RATINGS(T

=25℃)

SYMBOL

PARAMETER

2N5885

VALUE

UNIT

2N5885/5886

CBO

Collector-Base Voltage

CEO

Collector-Emitter Voltage

EBO

stg

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

Base Current-Continuous

Collector Power Dissipation @T

=25℃

Junction Temperature

Storage Temperature

.cn

.is

2N5886

2N5885

2N5886

℃

7.5

200

-65~200

THERMAL CHARACTERISTICS

SYMBOL

th j-c

PARAMETER

Thermal Resistance,Junction to Case

MAX

0.875

UNIT

℃/W

isc Website：www.iscsemi.cn

2N5885 Related Products

	2N5885	2N5886
Description	25 A, NPN, Si, POWER TRANSISTOR, TO-3	25 A, NPN, Si, POWER TRANSISTOR, TO-3
Number of terminals	2	2
Transistor polarity	NPN	NPN
Maximum collector current	25 A	25 A
Processing package description	TO-3, 2 PIN	TO-3, 2 PIN
state	ACTIVE	ACTIVE
packaging shape	ROUND	ROUND
Package Size	FLANGE MOUNT	FLANGE MOUNT
Terminal form	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	BOTTOM
Packaging Materials	METAL	METAL
structure	SINGLE	SINGLE
Number of components	1	1
Transistor component materials	SILICON	SILICON
Transistor type	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER
Minimum DC amplification factor	20	20
Rated crossover frequency	4 MHz	4 MHz

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