CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
I
D(ON)
I
GSS
r
DS(ON)
gfs
t
d(ON)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
Measured From the
Contact Screw On Tab To
the Center of Die
Measured From the Drain
Lead, 6mm (0.25in) From
Package to the Center of
Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
L
D
G
L
S
S
TEST CONDITIONS
I
D
= -250µA, V
GS
= 0V(Figure 10)
V
GS
= V
DS
, I
D
= -250µA
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
C
= 125
o
C
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= -10V
V
GS
=
±20V
I
D
= -3.5A, V
GS
= -10V (Figures 8, 9)
V
DS
≥
I
D(ON)
x r
DS(ON)MAX
, I
D
= -3.5A
(Figure 12)
V
DD
= -100V, I
D
≈
-6.5A, R
G
= 50Ω
R
L
= 15.4Ω (Figures 17, 18)
MOSFET Switching Times are Essentially
Independent of Operating Temperature
V
GS
= -10V, I
D
= -6.5A, V
DS
= 0.8 x Rated BV
DSS
I
g(REF)
= -1.5mA (Figures 14, 19, 20)
Gate Charge is Essentially Independent of
Operating Temperature
V
DS
= -25V, V
GS
= 0V, f = 1MHz
(Figure 11)
MIN
-200
-2
-
-
-6.5
-
-
2.2
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
0.500
3.5
30
50
50
40
31
18
13
550
170
50
3.5
MAX
-
-4
-25
-250
-
±100
0.800
-
50
100
100
80
45
-
-
-
-
-
-
UNITS
V
V
µA
µA
A
nA
Ω
S
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
nH
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Current
On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain (“Miller”) Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
-
4.5
-
nH
Internal Source Inductance
L
S
Measured From the Source
Lead, 6mm (0.25in) From
Package to Source Bond-
ing Pad
Typical Socket Mount
-
7.5
-
nH
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
R
θJC
R
θJA
-
-
-
-
1.67
80
o
C/W
o
C/W
4-28
IRF9630, RF1S9630SM
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
I
SD
I
SDM
TEST CONDITIONS
Modified MOSFET Symbol
Showing the Integral Re-
verse P-N Junction Diode
G
D
MIN
-
-
TYP
-
-
MAX
-6.5
-26
UNITS
A
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
NOTES:
V
SD
t
rr
Q
RR
T
J
= 25
o
C, I
SD
= -6.5A, V
GS
= 0V (Figure 13)
T
J
= 150
o
C, I
SD
= -6.5A, dI
SD
/dt = 100A/µs
T
J
= 150
o
C, I
SD
= -6.5A, dI
SD
/dt = 100A/µs
-
-
-
-
400
2.6
-1.5
-
-
V
ns
µC
2. Pulse Test: Pulse width
≤
300µs, duty cycle
≤
2%.
3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 50V, starting T
J
= 25
o
C, L = 17.75mH, R
G
= 25Ω, peak I
AS
= 6.5A. (Figures 15, 16).
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
Unless Otherwise Specified
-10
0.8
0.6
0.4
0.2
0
I
D
, DRAIN CURRENT (A)
0
50
100
150
-8
-6
-4
-2
0
0
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
THERMAL IMPEDENCE
0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
P
DM
t
1
t
2
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
10
-4
10
-3
10
-2
10
-1
t
1
, RECTANGULAR PULSE DURATION (s)
1
10
Z
qJC
, NORMALIZED
0.01
10
-5
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
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