SMD Type
High Speed Switching Diodes
KAS516
(BAS516)
Diodes
SOD-523
1.2 0.1
Unit:mm
0.3 0.05
0.6 0.1
■
Features
●
Small Surface Mounting Type
●
High Speed
0.8 0.05
1.6 0.1
0.77max
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Repetitive Peak Reverse Voltage
DC Reverse Voltage
Forward Current
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
RRM
V
R
I
F
I
FRM
I
FSM
P
tot
T
j
T
stg
Rating
85
75
250
500
0.5
500
150
-65 to +150
Unit
V
V
mA
mA
A
mW
℃
℃
■
Electrical Characteristics Ta = 25℃
Parameter
Symbol
I
F
= 1mA
Forward Voltage
V
F
I
F
= 10mA
I
F
= 50mA
I
F
= 150mA
Reverse Current
Capacitance Between Terminals
Reverse Recovery Time
I
R
C
T
t
rr
V
R
= 25V
V
R
= 75V
V
R
= 0V, f = 1.0MHz
I
F
= 10mA, R
L
=100Ω
Testconditons
Min
Typ
Max
0.715
0.855
1.0
1.25
0.03
1.0
1.0
4.0
μA
pF
ns
V
Unit
■
Marking
Marking
6
0.07max
+0.05
0.1
-0.02
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SMD Type
KAS516
(BAS516)
■
Electrical Characteristics Curves
Diodes
Transistors
MGM762
MBG382
I
F
(mA)
I
F
(mA)
500
300
Typ.
Typ.
Max.
400
200
300
T
j
= 150℃
200
100
100
T
j
= 25℃
0
0
50
100
150
200
0
0
1
2
T
s
(℃)
V
F
(V)
Maximum Permissible Continuous
Forward Current As A Function Of
Soldering Point Temperature.
Forward Current As A Function
Of Forward Voltage.
MBG704
100
I
FSM
(A)
10
T
j
= 25℃
1
0.1
1
10
100
1000
10000
tp
(μs)
Maximum Permissible Non-repetitive Peak Forward Current As A Function Of Pulse Duration.
2
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SMD Type
KAS516
(BAS516)
Diodes
MGA884
MBK881
I
R
(nA)
C
d
(pF)
100000
0.6
f = 1MHZ
Tj = 25℃
VR = 75V
10000
0.4
Max
1000
VR = 75V
0.2
100
Typ
Typ
10
0
100
200
0
0
4
8
12
16
VR = 25V
T
j
(℃)
V
R
(V)
Reverse Current As A Function Of
Junction Temperature.
Diode Capacitance As A Function
Of Reverse Voltage(Typical Values)
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