SMD Type
Power Switching Applications
2SA1681
Transistors
Features
Low Saturation Voltage: V
CE(sat)
= -0.5V(max)(I
C
= -1A)
High Speed Switching Time: t
stg
= 300ns(typ.)
Small Flat Package
P
C
= 1.0 to 2.0W (mounted on a ceramic substrate)
Complementary to 2SC4409
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Jumction temperature
Storage temperature Range
* Mounted on a ceramic board (250 mm
2
x 0.8 t)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
P
C
*
T
j
T
stg
Rating
-60
-50
-6
-2
-0.2
0.5
1
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector-Emitter Breakdown Voltage
Transition Frequency
Collector Output Capacitance
Turn-ON Time
Storage Time
Fall Time
Symbol
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
Testconditons
V
CB
= -60V , I
E
= 0
V
EB
= -6V , I
C
= 0
V
CE
= -2V , I
C
= -100mA
V
CE
= -2V , I
C
= -1.5A
I
C
= 1A , I
B
= -0.05A
I
C
= 1A , I
B
= -0.05A
-50
100
23
0.1
See Test Circuit
0.3
0.1
ìs
120
40
-0.5
-1.2
V
V
V
MHz
pF
Min
Typ
Max
-0.1
-0.1
400
Unit
ìA
ìA
V
(BR)CEO
I
C
= -10mA, I
B
= 0
f
T
C
ob
t
on
t
stg
t
f
V
CE
= -2V , I
C
= -100mA
V
CB
= -10V , I
E
= 0, f = 1MHz
www.kexin.com.cn
1
京公网安备 11010802033920号
EEWORLD
