SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
S9013LT1
NPN EPITAXIAL SILICON TRANSISTO
R
Package:
SOT-23
TECHNICAL DATA
*
*
Complement to S9012LT1
Collector Current: Ic= 500mA
High Total Power Dissipation: Pc=225Mw
ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation Ta=25℃*
Junction Temperature
Storage Temperature
Symbol
Vcbo
Vceo
Vebo
Ic
P
D
Tj
Tstg
Rating
40
20
5
500
225
150
-55-150
Unit
V
V
V
mA
mW
℃
℃
PIN:
STYLE
NO.1
B
E
C
1
2
3
ELECTRICAL CHARACTERISTICS at Ta=25℃
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage#
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter on Voltage
Symbol
BVcbo
BVceo
BVebo
Icbo
Iebo
Hfe
1
Hfe
2
Vce(sat)
Vbe(sat)
Vbe(on)
0.6
64
30
0.16
0.91
0.67
0.6
1.2
0.7
V
V
V
120
Min
40
20
5
100
100
300
Typ
Max
Unit
V
V
V
nA
nA
Test Conditions
Ic=100uA
Ie=0
Ic= 1mA Ib=0
Ie= 100uA
Vcb= 25V
Veb= 3V
Ic=0
Ie=0
Ic= 0
Vce= 1V Ic= 50mA
Vce=1V Ic=500mA
Ic= 500mA Ib= 50mA
Ic= 500mA Ib= 50mA
Vce= 1V Ic= 10mA
*
#
Total Device Dissipation : FR=1
X
0.75
X
0.062in Board,Derate 25℃.
Pulse Test : Pulse Width
≤300uS,Duty
cycle
≤
2%
DEVICE MARKING:
S9013LT1=K6
SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
S901３LT1
NPN EPITAXIAL SILICON TRANSISTO
R
TECHNICAL DATA
S901３LT1
京公网安备 11010802033920号
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