|
3FF50 |
3FF30 |
3FF40 |
3FF60 |
Description |
1 A, 300 V, SILICON, SIGNAL DIODE |
1 A, 300 V, SILICON, SIGNAL DIODE |
1 A, 400 V, SILICON, SIGNAL DIODE |
1 A, 600 V, SILICON, SIGNAL DIODE |
Maker |
SEMTECH |
SEMTECH |
SEMTECH |
SEMTECH |
package instruction |
HERMETIC SEALED, G63, 2 PIN |
HERMETIC SEALED, G63, 2 PIN |
E-XALF-W2 |
HERMETIC SEALED, G63, 2 PIN |
Contacts |
2 |
2 |
2 |
2 |
Reach Compliance Code |
unknow |
unknown |
unknown |
unknown |
ECCN code |
EAR99 |
EAR99 |
EAR99 |
EAR99 |
Shell connection |
ISOLATED |
ISOLATED |
ISOLATED |
ISOLATED |
Configuration |
SINGLE |
SINGLE |
SINGLE |
SINGLE |
Diode component materials |
SILICON |
SILICON |
SILICON |
SILICON |
Diode type |
RECTIFIER DIODE |
RECTIFIER DIODE |
RECTIFIER DIODE |
RECTIFIER DIODE |
Maximum forward voltage (VF) |
1.4 V |
1.4 V |
1.4 V |
1.4 V |
JESD-30 code |
E-XALF-W2 |
E-XALF-W2 |
E-XALF-W2 |
E-XALF-W2 |
Maximum non-repetitive peak forward current |
70 A |
70 A |
70 A |
70 A |
Number of components |
1 |
1 |
1 |
1 |
Number of terminals |
2 |
2 |
2 |
2 |
Maximum operating temperature |
150 °C |
150 °C |
150 °C |
150 °C |
Minimum operating temperature |
-65 °C |
-65 °C |
-65 °C |
-65 °C |
Maximum output current |
1 A |
1 A |
1 A |
1 A |
Package body material |
UNSPECIFIED |
UNSPECIFIED |
UNSPECIFIED |
UNSPECIFIED |
Package shape |
ELLIPTICAL |
ELLIPTICAL |
ELLIPTICAL |
ELLIPTICAL |
Package form |
LONG FORM |
LONG FORM |
LONG FORM |
LONG FORM |
Certification status |
Not Qualified |
Not Qualified |
Not Qualified |
Not Qualified |
Maximum repetitive peak reverse voltage |
500 V |
300 V |
400 V |
600 V |
Maximum reverse recovery time |
0.05 µs |
0.05 µs |
0.05 µs |
0.05 µs |
surface mount |
NO |
NO |
NO |
NO |
Terminal form |
WIRE |
WIRE |
WIRE |
WIRE |
Terminal location |
AXIAL |
AXIAL |
AXIAL |
AXIAL |
Base Number Matches |
1 |
1 |
1 |
1 |