NAND01GW3B2BV1 datasheet, PDF - EEWORLD Datasheet

NAND01GW3B2BV1: DescriptionFlash, 128MX8, 25000ns, PDSO48, 12 X 17 MM, 0.65 MM HEIGHT, PLASTIC, USOP-48; Categorystorage storage; File Size943KB，58 Pages; ManufacturerNumonyx ( Micron ); Websitehttps://www.micron.com

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NAND01GW3B2BV1 Overview

Flash, 128MX8, 25000ns, PDSO48, 12 X 17 MM, 0.65 MM HEIGHT, PLASTIC, USOP-48

Parameter Name	Attribute value
Parts packaging code	SOIC
package instruction	VSSOP,
Contacts	48
Reach Compliance Code	unknown
ECCN code	3A991.B.1.A
Maximum access time	25000 ns
JESD-30 code	R-PDSO-G48
length	15.4 mm
memory density	1073741824 bit
Memory IC Type	FLASH
memory width	8
Number of functions	1
Number of terminals	48
word count	134217728 words
character code	128000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	128MX8
Package body material	PLASTIC/EPOXY
encapsulated code	VSSOP
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Programming voltage	3 V
Certification status	Not Qualified
Maximum seat height	0.65 mm
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
type	NAND TYPE
width	12 mm
Base Number Matches	1

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