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HIP4086ABZ-T13

Description
HALF BRDG BASED MOSFET DRIVER
CategoryAnalog mixed-signal IC    Drivers and interfaces   
File Size470KB,16 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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HIP4086ABZ-T13 Overview

HALF BRDG BASED MOSFET DRIVER

HIP4086ABZ-T13 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerRenesas Electronics Corporation
package instruction,
Reach Compliance Codecompliant
Interface integrated circuit typeHALF BRIDGE BASED MOSFET DRIVER
JESD-609 codee3
Humidity sensitivity level3
Terminal surfaceMatte Tin (Sn) - annealed
Base Number Matches1
80V, 500mA, 3-Phase MOSFET Driver
HIP4086, HIP4086A
The HIP4086 and HIP4086A (referred to as the HIP4086/A) are
three phase N-Channel MOSFET drivers. Both parts are
specifically targeted for PWM motor control. These drivers have
flexible input protocol for driving every possible switch
combination. The user can even override the shoot-through
protection for switched reluctance applications.
The HIP4086/A have a wide range of programmable dead times
(0.5µs to 4.5µs) which makes them very suitable for the low
frequencies (up to 100kHz) typically used for motor drives.
The only difference between the HIP4086 and the HIP4086A is
that the HIP4086A has the built-in charge pumps disabled. This
is useful in applications that require very quiet EMI performance
(the charge pumps operate at 10MHz). The advantage of the
HIP4086 is that the built-in charge pumps allow indefinitely long
on times for the high-side drivers.
To insure that the high-side driver boot capacitors are fully
charged prior to turning on, a programmable bootstrap refresh
pulse is activated when VDD is first applied. When active, the
refresh pulse turns on all three of the low-side bridge FETs while
holding off the three high-side bridge FETs to charge the
high-side boot capacitors. After the refresh pulse clears, normal
operation begins.
Another useful feature of the HIP4086/A is the programmable
undervoltage set point. The set point range varies from 6.6V to
8.5V.
Features
• Independently drives 6 N-Channel MOSFETs in three phase
bridge configuration
• Bootstrap supply max voltage up to 95VDC with bias supply
from 7V to 15V
• 1.25A peak turn-off current
• User programmable dead time (0.5µs to 4.5µs)
• Bootstrap and optional charge pump maintain the high-side
driver bias voltage.
• Programmable bootstrap refresh time
• Drives 1000pF load with typical rise time of 20ns and Fall
Time of 10ns
• Programmable undervoltage set point
Applications
• Brushless Motors (BLDC)
• 3-phase AC motors
• Switched reluctance motor drives
• Battery powered vehicles
• Battery powered tools
Related Literature
AN9642
“HIP4086 3-Phase Bridge Driver Configurations and
Applications”
VDD
200
VDD
RDEL
CHB
BHB
AHB
V
xHB
- V
xHS
= 10V
OUTPUT CURRENT (µA)
150
AHO
HIP4086/A
BHO
CHO
CHS
BHS
AHS
Speed
Battery
24V...48V
AHI
ALI
Controller
Brake
BHI
BLI
CHI
CLI
100
VSS
ALO
BLO
CLO
50
0
-60
-40
-20
0
20
40
60
80
100 120 140 160
JUNCTION TEMPERATURE (°C)
FIGURE 1. TYPICAL APPLICATION
FIGURE 2. CHARGE PUMP OUTPUT CURRENT
February 1, 2013
FN4220.9
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774
|
Copyright Intersil Americas LLC 2011, 2013. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.

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Description HALF BRDG BASED MOSFET DRIVER 1.1A HALF BRDG BASED MOSFET DRIVER, PDSO24, PLASTIC, MS-013AD, SOIC-24 HALF BRDG BASED MOSFET DRIVER 1.1A HALF BRDG BASED MOSFET DRIVER, PDSO24, ROHS COMPLIANT, PLASTIC, MS-013AD, SOIC-24 HALF BRDG BASED MOSFET DRIVER
Maker Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation
Reach Compliance Code compliant not_compliant unknown compliant compliant
Interface integrated circuit type HALF BRIDGE BASED MOSFET DRIVER HALF BRIDGE BASED MOSFET DRIVER HALF BRIDGE BASED MOSFET DRIVER HALF BRIDGE BASED MOSFET DRIVER HALF BRIDGE BASED MOSFET DRIVER
Is it Rohs certified? conform to incompatible - conform to conform to
JESD-609 code e3 e0 - e3 e3
Humidity sensitivity level 3 1 - 3 -
Terminal surface Matte Tin (Sn) - annealed Tin/Lead (Sn/Pb) - Matte Tin (Sn) - annealed Matte Tin (Sn) - annealed
Base Number Matches 1 1 1 1 -
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