ATP207 datasheet, PDF - EEWORLD Datasheet

ATP207: DescriptionN-Channel Silicon MOSFET General-Purpose Switching Device Applications; CategoryDiscrete semiconductor The transistor; File Size251KB，4 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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ATP207 Overview

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Parameter Name	Attribute value
Maker	SANYO
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	35 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	40 V
Maximum drain current (Abs) (ID)	65 A
Maximum drain current (ID)	65 A
Maximum drain-source on-resistance	0.0091 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	50 W
Maximum pulsed drain current (IDM)	195 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

	ATP207	ENA1319
Description	N-Channel Silicon MOSFET General-Purpose Switching Device Applications	N-Channel Silicon MOSFET General-Purpose Switching Device Applications

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