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APT75GN60LDQ3G

Description
Insulated Gate Bipolar Transistor, 155A I(C), 600V V(BR)CES, N-Channel, TO-264AA, ROHS COMPLIANT, TO-264, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size431KB,9 Pages
ManufacturerADPOW
Websitehttp://www.advancedpower.com/
Environmental Compliance
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APT75GN60LDQ3G Overview

Insulated Gate Bipolar Transistor, 155A I(C), 600V V(BR)CES, N-Channel, TO-264AA, ROHS COMPLIANT, TO-264, 3 PIN

APT75GN60LDQ3G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknown
Other featuresHIGH RELIABILITY
Shell connectionCOLLECTOR
Maximum collector current (IC)155 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE WITH BUILT-IN DIODE
JEDEC-95 codeTO-264AA
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)485 ns
Nominal on time (ton)95 ns
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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