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HUFA76633P3

Description
39A, 100V, 0.037ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
CategoryDiscrete semiconductor    The transistor   
File Size900KB,11 Pages
ManufacturerRochester Electronics
Websitehttps://www.rocelec.com/
Environmental Compliance  
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HUFA76633P3 Overview

39A, 100V, 0.037ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

HUFA76633P3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Reach Compliance Codeunknown
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)39 A
Maximum drain-source on-resistance0.037 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Humidity sensitivity levelNOT SPECIFIED
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusCOMMERCIAL
surface mountNO
Terminal surfaceTIN
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

HUFA76633P3 Related Products

HUFA76633P3 HUFA76633S3S HUFA76633S3ST
Description 39A, 100V, 0.037ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 39A, 100V, 0.037ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB 39A, 100V, 0.037ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
Is it lead-free? Lead free Lead free Lead free
Reach Compliance Code unknown unknown unknown
Shell connection DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 100 V 100 V 100 V
Maximum drain current (ID) 39 A 39 A 39 A
Maximum drain-source on-resistance 0.037 Ω 0.037 Ω 0.037 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-220AB TO-263AB TO-263AB
JESD-30 code R-PSFM-T3 R-PSSO-G2 R-PSSO-G2
Humidity sensitivity level NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Number of components 1 1 1
Number of terminals 3 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Certification status COMMERCIAL COMMERCIAL COMMERCIAL
surface mount NO YES YES
Terminal surface TIN NOT SPECIFIED TIN
Terminal form THROUGH-HOLE GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Is it Rohs certified? conform to conform to -
JESD-609 code e3 - e3
Maker - Rochester Electronics Rochester Electronics

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