39A, 100V, 0.037ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Parameter Name | Attribute value |
Is it lead-free? | Lead free |
Is it Rohs certified? | conform to |
Reach Compliance Code | unknown |
Shell connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 100 V |
Maximum drain current (ID) | 39 A |
Maximum drain-source on-resistance | 0.037 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-220AB |
JESD-30 code | R-PSFM-T3 |
JESD-609 code | e3 |
Humidity sensitivity level | NOT SPECIFIED |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL |
Certification status | COMMERCIAL |
surface mount | NO |
Terminal surface | TIN |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Base Number Matches | 1 |
HUFA76633P3 | HUFA76633S3S | HUFA76633S3ST | |
---|---|---|---|
Description | 39A, 100V, 0.037ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 39A, 100V, 0.037ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | 39A, 100V, 0.037ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
Is it lead-free? | Lead free | Lead free | Lead free |
Reach Compliance Code | unknown | unknown | unknown |
Shell connection | DRAIN | DRAIN | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 100 V | 100 V | 100 V |
Maximum drain current (ID) | 39 A | 39 A | 39 A |
Maximum drain-source on-resistance | 0.037 Ω | 0.037 Ω | 0.037 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-220AB | TO-263AB | TO-263AB |
JESD-30 code | R-PSFM-T3 | R-PSSO-G2 | R-PSSO-G2 |
Humidity sensitivity level | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
Number of components | 1 | 1 | 1 |
Number of terminals | 3 | 2 | 2 |
Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | FLANGE MOUNT | SMALL OUTLINE | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL |
Certification status | COMMERCIAL | COMMERCIAL | COMMERCIAL |
surface mount | NO | YES | YES |
Terminal surface | TIN | NOT SPECIFIED | TIN |
Terminal form | THROUGH-HOLE | GULL WING | GULL WING |
Terminal location | SINGLE | SINGLE | SINGLE |
Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
transistor applications | SWITCHING | SWITCHING | SWITCHING |
Transistor component materials | SILICON | SILICON | SILICON |
Is it Rohs certified? | conform to | conform to | - |
JESD-609 code | e3 | - | e3 |
Maker | - | Rochester Electronics | Rochester Electronics |