TISP61511D, TISP61512P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
Copyright © 1997, Power Innovations Limited, UK
JULY 1995 - REVISED SEPTEMBER 1997
PROGRAMMABLE SLIC OVERVOLTAGE PROTECTION
q
Dual Voltage-Programmable Protectors.
- Wide 0 to -80 V Programming Range
- Low 5 mA max. Triggering Current
- High 150 mA min. Holding Current
Rated for International Surge Wave Shapes
VOLTAGE
WAVE SHAPE
2/10 µs
1.2/50 µs
0.5/700 µs
10/700 µs
10/1000 µs
STANDARD
TR-NWT-001089
ETS 300 047-1
RLM88/I3124
K17, K20, K21
TR-NWT-001089
I
TSP
A
170
90
40
40
30
'61511D PACKAGE
(TOP VIEW)
(Tip)
K1
NC
1
2
3
4
8
7
6
5
K1 (Tip)
A
A
(Ground)
(Ground)
(Gate) G
(Ring) K2
q
K2 (Ring)
MD6XAL
NC - No internal connection
Terminal typical application names shown in
parenthesis
'61512P PACKAGE
(TOP VIEW)
(Tip)
K1
1
2
3
4
8
7
6
5
K1 (Tip)
A
A
(Ground)
(Ground)
q
Functional Replacements for
DEVICE TYPE
LCP1511,
LCP1511D,
ATTL7591AS,
MGSS150-1
LCP1512,
LCP1512D,
ATTL7591AB,
MGSS150-2
8-pin Plastic DIP
TISP61512P
8-pin Small-Outline
PACKAGE TYPE
FUNCTIONAL
REPLACEMENT
TISP61511D
or order as
TISP61511DR
for Taped and Reeled
(Gate) G
NC
(Ring) K2
K2 (Ring)
MD6XAJ
NC - No internal connection
Terminal typical application names shown in
parenthesis
device symbol
K1
G
K2
description
The TISP61511D and TISP61512P are dual
forward-conducting buffered p-gate overvoltage
protectors. They are designed to protect
monolithic Subscriber Line Interface Circuits,
SLICs, against overvoltages on the telephone
line caused by lightning, ac power contact and
induction. The TISP61511D and TISP61512P
limit voltages that exceed the SLIC supply rail
voltage.
A
SD6XAE
Terminals K1, K2 and A correspond to the alternative
line designators of T, R and G or A, B and C. The
negative protection voltage is controlled by the voltage,
V
GG,
applied to the G terminal.
The SLIC line driver section is typically powered
from 0 V (ground) and a negative voltage in the region of -10 V to -70 V. The protector gate is connected to
this negative supply. This references the protection (clipping) voltage to the negative supply voltage. As the
protection voltage will track the negative supply voltage the overvoltage stress on the SLIC is minimised.
Positive overvoltages are clipped to ground by diode forward conduction. Negative overvoltages are initially
clipped close to the SLIC negative supply rail value. If sufficient current is available from the overvoltage, then
the protector will crowbar into a low voltage on-state condition. As the current subsides the high holding
current of the crowbar prevents d.c. latchup.
These monolithic protection devices are fabricated in ion-implanted planar vertical power structures for high
reliability and in normal system operation they are virtually transparent. The buffered gate design reduces the
loading on the SLIC supply during overvoltages caused by power cross and induction.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
TISP61511D, TISP61512P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
JULY 1995 - REVISED SEPTEMBER 1997
absolute maximum ratings
RATING
Repetitive peak off-state voltage, I
G
= 0, -40°C
≤
T
J
≤
85°C
Repetitive peak gate-cathode voltage, V
KA
= 0, -40°C
≤
T
J
≤
85°C
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
10/1000 µs
5/310 µs
0.2/310 µs
1/20 µs
2/10 µs
Non-repetitive peak on-state current, 50 Hz (see Notes 1 and 2)
full-sine-wave, 20 ms
1s
Non-repetitive peak gate current, half-sine-wave, 10 ms (see Notes 1 and 2)
Junction temperature
Storage temperature range
I
GSM
T
J
T
stg
I
TSM
5
3.5
2
-55 to +150
-55 to +150
A
°C
°C
A
T
J
= -40°C
T
J
= 25, 85°C
I
TSP
30
40
40
90
120
170
A
SYMBOL
V
DRM
V
GKRM
VALUE
-100
-85
UNIT
V
V
NOTES: 1. Initially the protector must be in thermal equilibrium with -40°C
≤
T
J
≤
85°C, unless otherwise specified. The surge may be
repeated after the device returns to its initial conditions. See the applications section for the details of the impulse generators.
2. The rated current values may be applied to either the R-G or T-G terminal pairs. Additionally, both terminal pairs may have their
rated current values applied simultaneously (in this case the G terminal current will be twice the rated current value of an individual
terminal pair). Above 85°C, derate linearly to zero at 150°C lead temperature.
recommended operating conditions
MIN
C
G
Gate decoupling capacitor
TYP
220
MAX
UNIT
nF
electrical characteristics, T
J
= 25°C (unless otherwise noted)
PARAMETER
I
D
V
(BO)
V
GK(BO)
Off-state current
Breakover voltage
Gate-cathode voltage
at breakover
On-state voltage
Forward voltage
Peak forward recovery
voltage
Holding current
Gate reverse current
Gate trigger current
Gate trigger voltage
V
D
= -85 V, V
GK
= 0 V
TEST CONDITIONS
T
J
= 25°C
T
J
= 70°C
MIN
TYP
MAX
5
50
-58
10
20
25
3
4
3
5
5
7
12
150
T
J
= 25°C
T
J
= 70°C
0.2
5
50
5
2.5
mA
µA
µA
mA
V
V
V
V
V
UNIT
µA
µA
V
I
T
= 30 A, 10/1000 µs, 1 kV, R
S
= 33
Ω,
di/dt
(i)
= 8 A/µs (see Note 3)
I
T
= 30 A, 10/700 µs, 1.5 kV, R
S
= 10
Ω,
di/dt
(i)
= 14 A/µs (see Note 3)
I
T
= 30 A, 1.2/50 µs, 1.5 kV, R
S
= 10
Ω,
di/dt
(i)
= 70 A/µs (see Note 3)
I
T
= 38 A, 2/10 µs, 2.5 kV, R
S
= 61
Ω,
di/dt
(i)
= 40 A/µs (see Note 3)
I
T
= 0.5 A, t
w
= 500 µs
I
T
= 3 A, t
w
= 500 µs
I
F
= 5 A, t
w
= 500 µs
I
F
= 30 A, 10/1000 µs, 1 kV, R
S
= 33
Ω,
di/dt
(i)
= 8 A/µs (see Note 3)
I
T
= 30 A, 10/700 µs, 1.5 kV, R
S
= 10
Ω,
di/dt
(i)
= 14 A/µs (see Note 3)
I
T
= 30 A, 1.2/50 µs, 1.5 kV, R
S
= 10
Ω,
di/dt
(i)
= 70 A/µs (see Note 3)
I
T
= 38 A, 2/10 µs, 2.5 kV, R
S
= 61
Ω,
di/dt
(i)
= 40 A/µs (see Note 3)
I
T
= 1 A, di/dt = -1A/ms, V
GG
= -48 V
V
GG
= -75 V, K and A terminals connected
I
T
= 3 A, t
p(g)
≥
20 µs, V
GG
= -48 V
I
T
= 3 A, t
p(g)
≥
20 µs, V
GG
= -48 V
V
T
V
F
V
FRM
I
H
I
GAS
I
GT
V
GT
NOTE
3: All tests have C
G
= 220 nF and V
GG
= -48 V. R
S
is the current limiting resistor between the output of the impulse generator and
the R or T terminal. See the applications section for the details of the impulse generators.
PRODUCT
INFORMATION
2
TISP61511D, TISP61512P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
JULY 1995 - REVISED SEPTEMBER 1997
electrical characteristics, T
J
= 25°C (unless otherwise noted) (Continued)
PARAMETER
C
AK
Anode-cathode off-
state capacitance
TEST CONDITIONS
f = 1 MHz, V
d
= 1 V, I
G
= 0, (see Note 4)
V
D
= -3 V
V
D
= -48 V
MIN
TYP
MAX
100
50
UNIT
pF
pF
NOTE
4: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
device terminals are a.c. connected to the guard terminal of the bridge.
thermal characteristics
PARAMETER
R
θ
JA
Junction to free air thermal resistance
2
TEST CONDITIONS
P
tot
= 0.8 W, T
A
= 25°C
5 cm , FR4 PCB
D Package
P Package
MIN
TYP
MAX
170
125
UNIT
°C/W
PARAMETER MEASUREMENT INFORMATION
+i
I
FSP
(= |I
TSP
|)
Quadrant I
Forward
Conduction
Characteristic
I
FSM
(= |I
TSM
|)
I
F
V
F
V
GK(BO)
V
GG
V
D
I
D
-v
+v
I
(BO)
I
S
I
H
V
T
I
T
I
TSM
V
(BO)
V
S
Quadrant III
Switching
Characteristic
I
TSP
-i
PM6XAAA
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC
PRODUCT
INFORMATION
3
TISP61511D, TISP61512P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
JULY 1995 - REVISED SEPTEMBER 1997
THERMAL INFORMATION
MAXIMUM NON-RECURRING 50 Hz CURRENT
vs
CURRENT DURATION
TI6LAA
I
TRMS
- Maximum Non-Recurrent 50 Hz Current - A
V
GEN
= 250 Vrms
R
GEN
= 10 to 150
Ω
10
TISP61512P
TISP61511D
1
0·1
1
10
100
1000
t - Current Duration - s
Figure 2.
DEVICE PARAMETERS
general
Thyristor based overvoltage protectors, for telecommunications equipment, became popular in the late
1970s. These were fixed voltage breakover triggered devices, likened to solid state gas discharge tubes. As
these were new forms of thyristor, the existing thyristor terminology did not cover their special characteristics.
This resulted in the invention of new terms based on the application usage and device characteristic. Initially,
there was a wide diversity of terms to describe the same thing, but today the number of terms have reduced
and stabilised.
Programmable, (gated), overvoltage protectors are relatively new and require additional parameters to
specify their operation. Similarly to the fixed voltage protectors, the introduction of these devices has resulted
in a wide diversity of terms to describe the same thing. To help promote an understanding of the terms and
their alternatives, this section has a list of alternative terms and the parameter definitions used for this data
sheet. In general, the Texas Instruments approach is to use terms related to the device internal structure,
rather than its application usage as a single device may have many applications each using a different
terminology for circuit connection.
alternative symbol cross-reference guide
This guide is intended to help the translation of alternative symbols to those used in this data sheet. As in
some cases the alternative symbols have no substance in international standards and are not fully defined by
the originators, users must confirm symbol equivalence. No liability will be assumed from the use of this
guide.
PRODUCT
INFORMATION
4
TISP61511D, TISP61512P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
JULY 1995 - REVISED SEPTEMBER 1997
DATA SHEET ALTERNATIVE
SYMBOL
I
TSP
I
D
I
R
I
RM
I
RG
V
R
V
RM
V
FP
V
SGL
V
gate
V
G
V
DRM
V
GKM
V
GK
V
GK(BO)
V
K
C
AK
K1
K2
A
G
R
θ
JA
V
GATE
V
S
V
MLG
V
MGL
V
GL
V
DGL
V
LG
V
GND/LINE
C
off
Tip
Ring
GND
Gate
R
th
(j-a)
Maximum voltage LINE/GND
Maximum voltage GATE/LINE
GATE/LINE voltage
Dynamic switching voltage GATE/LINE
LINE/GND voltage
Off-state capacitance LINE/GND
Tip terminal
Ring terminal
Ground terminal
Gate terminal
Thermal Resistance, junction to ambient
GATE/GND voltage
SYMBOL
I
PP
TISP61511D, TISP61512P PARAMETER
Non-repetitive peak on-state pulse current
Off-state current
ALTERNATIVE PARAMETER
Peak pulse current
Reverse leakage current LINE/GND
Reverse leakage current GATE/LINE
Reverse voltage LINE/GND
Peak forward voltage LINE/GND
Dynamic switching voltage GND/LINE
Gate reverse current (with A and K terminals connected) I
GAS
Off-state voltage
Peak forward recovery voltage
Breakover voltage
Gate voltage, (V
GG
is gate supply voltage referenced
to the A terminal)
Repetitive peak off-state voltage
Repetitive peak gate-cathode voltage
Gate-cathode voltage
Gate-cathode voltage at breakover
Cathode-anode voltage
Anode-cathode capacitance
Cathode 1 terminal
Cathode 2 terminal
Anode terminal
Gate terminal
Thermal Resistance, junction to ambient
V
D
V
FRM
V
(BO)
APPLICATIONS INFORMATION
electrical characteristics
The electrical characteristics of a thyristor overvoltage protector are strongly dependent on junction
temperature, T
J
. Hence a characteristic value will depend on the junction temperature at the instant of
measurement. The values given in this data sheet were measured on commercial testers, which generally
minimise the temperature rise caused by testing.
application circuit
Figure 3 shows a typical TISP6151xx SLIC card protection circuit. The incoming line wires, R and T, connect
to the relay matrix via the series over-current protection. Fusible resistors, fuses and positive temperature
coefficient (PTC) resistors can be used for over-current protection. Resistors will reduce the prospective
current from the surge generator for both the TISP6151xx and the ring/test protector. The TISP7xxxF3
protector has the same protection voltage for any terminal pair. This protector is used when the ring generator
configuration maybe ground or battery-backed. For dedicated ground-backed ringing generators, the
TISP3xxxF3 gives better protection as its inter-wire protection voltage is twice the wire to ground value.
Relay contacts 3a and 3b connect the line wires to the SLIC via the TISP6151xx protector. The protector gate
reference voltage comes from the SLIC negative supply (V
BAT
). A 220 nF gate capacitor sources the high
gate current pulses caused by fast rising impulses.
PRODUCT
INFORMATION
5
Microcontroller MCU
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