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AON7400AL

Description
Power Field-Effect Transistor, 40A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DFN3X3EP, 8 PIN
CategoryDiscrete semiconductor    The transistor   
File Size325KB,6 Pages
ManufacturerAlpha & Omega Semiconductor
Websitehttp://www.aosmd.com/about
Environmental Compliance
Download Datasheet Parametric View All

AON7400AL Overview

Power Field-Effect Transistor, 40A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DFN3X3EP, 8 PIN

AON7400AL Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, S-PDSO-F5
Reach Compliance Codecompliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)36 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)40 A
Maximum drain-source on-resistance0.0105 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeS-PDSO-F5
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)100 A
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
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