AP9971GD datasheet, PDF - EEWORLD Datasheet

AP9971GD: DescriptionN-CHANNEL ENHANCEMENT MODE POWER MOSFET; CategoryDiscrete semiconductor The transistor; File Size165KB，5 Pages; ManufacturerAPEC

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AP9971GD Overview

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Parameter Name	Attribute value
Parts packaging code	DIP
package instruction	IN-LINE, R-PDIP-T8
Contacts	8
Reach Compliance Code	compli
ECCN code	EAR99
Other features	ULTRA-LOW RESISTANCE
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	5 A
Maximum drain-source on-resistance	0.05 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDIP-T8
Number of components	2
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	20 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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