K4E661612B-TC50 datasheet, PDF

K4E661612B-TC50: DescriptionEDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50; Categorystorage storage; File Size885KB，36 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K4E661612B-TC50 Overview

EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50

Parameter Name	Attribute value
Parts packaging code	TSOP2
package instruction	TSOP2,
Contacts	50
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FAST PAGE WITH EDO
Maximum access time	50 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 code	R-PDSO-G50
length	20.95 mm
memory density	67108864 bit
Memory IC Type	EDO DRAM
memory width	16
Number of functions	1
Number of ports	1
Number of terminals	50
word count	4194304 words
character code	4000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	4MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	GULL WING
Terminal pitch	0.8 mm
Terminal location	DUAL
width	10.16 mm
Base Number Matches	1

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