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HVL358C

Description
20.2 pF, SILICON, VARIABLE CAPACITANCE DIODE
CategoryDiscrete semiconductor    diode   
File Size45KB,5 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

HVL358C Overview

20.2 pF, SILICON, VARIABLE CAPACITANCE DIODE

HVL358C Parametric

Parameter NameAttribute value
package instructionEFP-2
Contacts2
Manufacturer packaging codeEFP-2
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE
Diode Capacitance Tolerance3.47%
Minimum diode capacitance ratio2.2
Nominal diode capacitance20.2 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeR-PDSO-F2
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage15 V
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Base Number Matches1
HVL358C
Variable Capacitance Diode for VCO
REJ03G0221-0200
Rev.2.00
Mar 10, 2006
Features
High capacitance ratio. (n = 2.20 min)
Low series resistance. (rs = 0.40
max)
Good C-V linearity
Extremely small Flat Lead Package (EFP) is suitable for surface mount design.
Ordering Information
Type No.
HVL358C
Laser Mark
8
Package Name
EFP
Package Code
PXSF0002ZA-A
Pin Arrangement
Cathode mark
Mark
1
8
2
1. Cathode
2. Anode
Rev.2.00 Mar 10, 2006 page 1 of 4

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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