Silicon NPN Epitaxial
Parameter Name | Attribute value |
Parts packaging code | TO-92 |
package instruction | TO-92(1), 3 PIN |
Contacts | 3 |
Reach Compliance Code | compli |
ECCN code | EAR99 |
Maximum collector current (IC) | 0.1 A |
Collector-emitter maximum voltage | 60 V |
Configuration | SINGLE |
Minimum DC current gain (hFE) | 250 |
JEDEC-95 code | TO-92 |
JESD-30 code | O-PBCY-T3 |
Number of components | 1 |
Number of terminals | 3 |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | ROUND |
Package form | CYLINDRICAL |
Polarity/channel type | NPN |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | THROUGH-HOLE |
Terminal location | BOTTOM |
transistor applications | AMPLIFIER |
Transistor component materials | SILICON |
Nominal transition frequency (fT) | 90 MHz |
Base Number Matches | 1 |
2SC2396 | 2SC2544 | 2SC2543 | |
---|---|---|---|
Description | Silicon NPN Epitaxial | Silicon NPN Epitaxial | Silicon NPN Epitaxial |
Parts packaging code | TO-92 | TO-92 | TO-92 |
package instruction | TO-92(1), 3 PIN | TO-92(1), 3 PIN | TO-92(1), 3 PIN |
Contacts | 3 | 3 | 3 |
Reach Compliance Code | compli | compli | compli |
ECCN code | EAR99 | EAR99 | EAR99 |
Maximum collector current (IC) | 0.1 A | 0.1 A | 0.1 A |
Collector-emitter maximum voltage | 60 V | 120 V | 90 V |
Configuration | SINGLE | SINGLE | SINGLE |
Minimum DC current gain (hFE) | 250 | 250 | 250 |
JEDEC-95 code | TO-92 | TO-92 | TO-92 |
JESD-30 code | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 |
Number of components | 1 | 1 | 1 |
Number of terminals | 3 | 3 | 3 |
Maximum operating temperature | 150 °C | 150 °C | 150 °C |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | ROUND | ROUND | ROUND |
Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
Polarity/channel type | NPN | NPN | NPN |
Certification status | Not Qualified | Not Qualified | Not Qualified |
surface mount | NO | NO | NO |
Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
Terminal location | BOTTOM | BOTTOM | BOTTOM |
transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER |
Transistor component materials | SILICON | SILICON | SILICON |
Nominal transition frequency (fT) | 90 MHz | 90 MHz | 90 MHz |
Base Number Matches | 1 | 1 | 1 |