RJK2006DPE-TL-E datasheet, PDF

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RJK2006DPE-TL-E: DescriptionSilicon N Channel MOS FET High Speed Power Switching; CategoryDiscrete semiconductor The transistor; File Size58KB，5 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/; Environmental Compliance

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RJK2006DPE-TL-E Overview

Silicon N Channel MOS FET High Speed Power Switching

RJK2006DPE-TL-E Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (Abs) (ID)	40 A
Maximum drain current (ID)	40 A
Maximum drain-source on-resistance	0.059 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	245
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	100 W
Maximum pulsed drain current (IDM)	100 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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RJK2006DPJ, RJK2006DPE, RJK2006DPF

Silicon N Channel MOS FET

High Speed Power Switching

REJ03G0512-0100

Rev.1.00

Jan.14.2005

Features

•

Low on-resistance

•

Low leakage current

•

High speed switching

Outline

LDPAK

RJK2006DPE

RJK2006DPF

RJK2006DPJ

1. Gate

2. Drain

3. Source

4. Drain

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to Source voltage

Gate to Source voltage

Drain current

Drain peak current

Body-Drain diode reverse Drain current

Body-Drain diode reverse Drain peak current

Avalanche current

Avalanche energy

Channel dissipation

Channel to case thermal impedance

Channel temperature

Storage temperature

Notes: 1. PW

≤

µs,

duty cycle

≤

2. Value at Tc = 25°C

3. STch = 25°C, Tch

≤

150°C

Symbol

DSS

GSS

D (pulse)Note1

DR (pulse)Note1

APNote3

ARNote3

Pch

Note2

θch-c

Tch

Tstg

Ratings

200

±30

100

48.6

100

1.25

150

–55 to +150

Unit

°C/W

°C

Rev.1.00, Jan.14.2005, page 1 of 4

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1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.

Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits,

(ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.

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8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.

RENESAS SALES OFFICES

Refer to "http://www.renesas.com/en/network" for the latest and detailed information.

Renesas Technology America, Inc.

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Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501

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Hong Kong Ltd.

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Renesas Technology Taiwan Co.,

Ltd.

10th Floor, No.99, Fushing North Road, Taipei, Taiwan

Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999

Renesas Technology (Shanghai) Co.,

Ltd.

Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China

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Renesas Technology Singapore Pte. Ltd.

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Tel: <65> 6213-0200, Fax: <65> 6278-8001

http://www.renesas.com

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