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RJK0354DSP-00-J0

Description
Silicon N Channel Power MOS FET Power Switching
CategoryDiscrete semiconductor    The transistor   
File Size45KB,4 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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RJK0354DSP-00-J0 Overview

Silicon N Channel Power MOS FET Power Switching

RJK0354DSP-00-J0 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRenesas Electronics Corporation
Parts packaging codeSOT
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Reach Compliance Codecompli
ECCN codeEAR99
Factory Lead Time16 weeks
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)16 A
Maximum drain current (ID)16 A
Maximum drain-source on-resistance0.0105 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
Humidity sensitivity level1
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)2 W
Maximum pulsed drain current (IDM)128 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature20
transistor applicationsSWITCHING
Transistor component materialsSILICON
RJK0354DSP
Silicon N Channel Power MOS FET
Power Switching
REJ03G1661-0101
Rev.1.01
Apr 24, 2008
Features
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
= 5.4 m
typ. (at V
GS
= 10 V)
Pb-free
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8<FP-8DAV>)
87
65
5 6 7 8
D D D D
3
12
4
4
G
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to ambient thermal impedance
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
Note1
I
D(pulse)
Ratings
30
±20
16
128
16
15
22.5
2.0
62.5
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
I
DR
I
AP
Note 2
E
AR Note 2
Pch
Note3
θch-a
Note3
Tch
Tstg
Notes: 1. PW
10
µs,
duty cycle
1%
2. Value at Tch = 25°C, Rg
50
3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
10s
REJ03G1661-0101 Rev.1.01 Apr 24, 2008
Page 1 of 3

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