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HVL388CM

Description
3.3135 pF, SILICON, VARIABLE CAPACITANCE DIODE
CategoryDiscrete semiconductor    diode   
File Size147KB,5 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

HVL388CM Overview

3.3135 pF, SILICON, VARIABLE CAPACITANCE DIODE

HVL388CM Parametric

Parameter NameAttribute value
MakerRenesas Electronics Corporation
package instructionTEFP-2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE
Diode Capacitance Tolerance4.57%
Minimum diode capacitance ratio1.88
Nominal diode capacitance3.3135 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeR-PDSO-F2
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage15 V
surface mountYES
Terminal formFLAT
Terminal locationDUAL
HVL388CM
Variable Capacitance Diode for VCO
REJ03G0229-0200
Rev.2.00
Mar 15, 2006
Features
High capacitance ratio. (n = 1.880 min)
Low series resistance. (rs = 0.75
max)
Thin Extremely small Flat Lead Package (TEFP) is suitable for surface mount design.
Ordering Information
Type No.
HVL388CM
Laser Mark
9
Package Name
TEFP
Package Code
PUSF0002ZA-A
Pin Arrangement
Cathode mark
Mark
9
1
2
1. Cathode
2. Anode
Rev.2.00 Mar 15, 2006 page 1 of 4

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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