RJK0330DPB-00-J0 datasheet, PDF

RJK0330DPB-00-J0: Description45 A, 30 V, 0.0039 ohm, N-CHANNEL, Si, POWER, MOSFET; Categorysemiconductor Discrete semiconductor; File Size115KB，7 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

Download Datasheet Parametric Compare View All

RJK0330DPB-00-J0 Overview

45 A, 30 V, 0.0039 ohm, N-CHANNEL, Si, POWER, MOSFET

Parameter Name	Attribute value
Number of terminals	4
Minimum breakdown voltage	30 V
Processing package description	Lead FREE, SC-100, LFPAK-5
Lead-free	Yes
EU RoHS regulations	Yes
state	TRANSFERRED
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	NOT SPECIFIED
Terminal location	single
Packaging Materials	Plastic/Epoxy
structure	Single WITH BUILT-IN diode
Shell connection	DRAIN
Number of components	1
transistor applications	switch
Transistor component materials	silicon
Channel type	N channel
field effect transistor technology	Metal-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	universal power supply
Maximum leakage current	45 A
Maximum drain on-resistance	0.0039 ohm
Maximum leakage current pulse	180 A

	RJK0330DPB-00-J0	RJK0330DPB
Description	45 A, 30 V, 0.0039 ohm, N-CHANNEL, Si, POWER, MOSFET	45 A, 30 V, 0.0039 ohm, N-CHANNEL, Si, POWER, MOSFET
Number of terminals	4	4
Minimum breakdown voltage	30 V	30 V
Processing package description	Lead FREE, SC-100, LFPAK-5	Lead FREE, SC-100, LFPAK-5
Lead-free	Yes	Yes
EU RoHS regulations	Yes	Yes
state	TRANSFERRED	TRANSFERRED
packaging shape	Rectangle	Rectangle
Package Size	SMALL OUTLINE	SMALL OUTLINE
surface mount	Yes	Yes
Terminal form	GULL WING	GULL WING
terminal coating	NOT SPECIFIED	NOT SPECIFIED
Terminal location	single	single
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy
structure	Single WITH BUILT-IN diode	Single WITH BUILT-IN diode
Shell connection	DRAIN	DRAIN
Number of components	1	1
transistor applications	switch	switch
Transistor component materials	silicon	silicon
Channel type	N channel	N channel
field effect transistor technology	Metal-OXIDE SEMICONDUCTOR	Metal-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT	ENHANCEMENT
Transistor type	universal power supply	universal power supply
Maximum leakage current	45 A	45 A
Maximum drain on-resistance	0.0039 ohm	0.0039 ohm
Maximum leakage current pulse	180 A	180 A

Shortcut: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

Popular Components