STP80NF03L
N-CHANNEL 30V - 0.004
Ω
- 80A TO-220
STripFET™ II MOSFET
TYPE
STP80NF03L
s
s
s
s
V
DSS
30 V
R
DS(on)
< 0.0045
Ω
I
D
80 A
TYPICAL R
DS
(on) = 0.004
Ω
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW THRESHOLD DRIVE
1
3
2
TO-220
DESCRIPTION
This Power MOSFET is the latest development of ST-
Microelectronics unique “Single Feature Size™” strip-
based process. The resulting transistor shows ex-
tremely high packing density for low on-resistance,
rugged avalance characteristics and less critical
alignment steps therefore a remarkable manufactur-
ing reproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT
(INJECTION,ABS, AIR-BAG ,LAMPDRIVERS
Etc.)
ORDERING INFORMATION
b
O
so
SALES TYPE
STP80NF03L
te
le
r
P
uc
od
s)
t(
bs
-O
et
l
o
P
e
od
r
s)
t(
uc
MARKING
P80NF03L
PACKAGE
TO-220
PACKAGING
TUBE
.
January 2004
1/8
STP80NF03L
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
(#)
I
D
(#)
I
DM
( )
P
TOT
dv/dt (1)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
Drain Current (pulsed)
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery Voltage Slope
Storage Temperature
Max. Operating Junction Temperature
Value
30
30
± 20
80
80
320
300
2.0
2.0
–65 to 175
175
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
(#) Current Limited by Package.
( ) Pulse width limited by safe operating area.
(1) I
SD
≤
80A, di/dt
≤
240 A/µs, V
DD
= 24V ; T
j
≤
T
JMAX.
THERMAL DATA
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose Typ
AVALANCHE CHARACTERISTICS
Symbol
I
AR
E
AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 20 V)
ELECTRICAL CHARACTERISTICS
(T
CASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
OFF/ON
Symbol
V
(BR)DSS
I
DSS
b
O
so
te
le
Parameter
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Gate Threshold Voltage
Static Drain-source On
Resistance
r
P
uc
od
s)
t(
so
b
-O
te
le
r
P
0.5
62.5
300
od
s)
t(
uc
°C
°C/W
°C/W
Max Value
40
2.3
Unit
A
J
Test Conditions
I
D
= 250 µA, V
GS
= 0
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125 °C
V
GS
= ± 20V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 40 A
V
GS
= 4.5 V, I
D
= 40 A
Min.
30
Typ.
Max.
Unit
V
1
10
±100
1
1.5
0.004
0.0045
2.5
0.0045
0.0065
µA
µA
nA
V
Ω
Ω
I
GSS
V
GS(th)
R
DS(on)
2/8
STP80NF03L
ELECTRICAL CHARACTERISTICS
(CONTINUED)
DYNAMIC
Symbol
g
fs
(1)
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V
DS
=15 V
,
I
D
= 15 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
50
5500
1670
290
Max.
Unit
S
pF
pF
pF
SWITCHING ON
Symbol
t
d(on)
t
r
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
V
DD
= 15 V, I
D
= 40 A
R
G
= 4.7Ω V
GS
= 4.5 V
(Resistive Load, Figure 3)
V
DD
= 24V, I
D
= 80A,
V
GS
= 4.5V
Min.
Typ.
30
270
85
23
40
110
Max.
Unit
ns
ns
SWITCHING OFF
Symbol
t
d(off)
t
f
t
r(Voff)
t
f
t
c
Parameter
Turn-off-Delay Time
Fall Time
Off-Voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V
DD
= 15 V, I
D
= 40 A,
R
G
= 4.7Ω, V
GS
= 4.5V
(Resistive Load, Figure 3)
V
clamp
= 24 V, I
D
= 80 A,
R
G
= 4.7Ω, V
GS
= 4.5V
(Inductive Load, Figure 5)
Min.
Typ.
110
95
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(1)
V
SD
(2)
t
rr
Q
rr
I
RRM
Parameter
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
O
so
b
te
le
r
P
uc
od
s)
t(
Test Conditions
bs
-O
l
o
te
e
r
P
od
125
75
125
s)
t(
uc
Max.
nC
nC
nC
Unit
ns
ns
ns
ns
ns
Min.
Typ.
Max.
80
320
1.5
Unit
A
A
V
ns
µC
A
I
SD
= 80 A, V
GS
= 0
75
0.15
4
I
SD
= 80 A, di/dt = 100 A/µs,
V
DD
= 20 V, T
j
= 150°C
(see test circuit, Figure 5)
3/8
STP80NF03L
Safe Operating Area
Thermal Impedance
Output Characteristics
Transfer Characteristics
Transconductance
O
so
b
te
le
r
P
uc
od
s)
t(
bs
-O
et
l
o
P
e
od
r
s)
t(
uc
Static Drain-source On Resistance
4/8
STP80NF03L
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
O
so
b
te
le
r
P
uc
od
s)
t(
bs
-O
et
l
o
P
e
od
r
s)
t(
uc
NormalizedBreakdownVoltage vs Temperature
5/8
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