Silicon N Channel MOS FET
| Parameter Name | Attribute value |
| Brand Name | Renesas |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Parts packaging code | TO-3P |
| package instruction | SC-65, TO-3P, 3 PIN |
| Contacts | 4 |
| Manufacturer packaging code | PRSS0004ZE-A4 |
| Reach Compliance Code | compli |
| ECCN code | EAR99 |
| Factory Lead Time | 1 week |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 1000 V |
| Maximum drain current (Abs) (ID) | 8 A |
| Maximum drain current (ID) | 8 A |
| Maximum drain-source on-resistance | 1.6 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PSFM-T3 |
| JESD-609 code | e2 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 150 W |
| Maximum pulsed drain current (IDM) | 24 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Copper (Sn/Cu) |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| 2SK1934-E | 2SK1301 | 2SK1328 | 2SK1329 | 2SK1934 | 2SK1301-E | GRM219R61A225KA01J | S6272 | |
|---|---|---|---|---|---|---|---|---|
| Description | Silicon N Channel MOS FET | Silicon N Channel MOS FET | Silicon N Channel MOS FET | Silicon N Channel MOS FET | Silicon N Channel MOS FET | Silicon N Channel MOS FET | Chip Multilayer Ceramic Capacitors for General Purpose | 18 watt; Mini Spiral Compact Fluorescent; 4100K; 82 CRI; Medium base; 120 volts; 3-pack |
| Is it lead-free? | Lead free | Contains lead | Contains lead | Contains lead | Contains lead | Lead free | - | - |
| Is it Rohs certified? | conform to | incompatible | incompatible | incompatible | incompatible | conform to | - | - |
| Parts packaging code | TO-3P | TO-220AB | TO-3PFM | TO-3PFM | TO-3P | TO-220AB | - | - |
| package instruction | SC-65, TO-3P, 3 PIN | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | - | - |
| Contacts | 4 | 3 | 3 | 3 | 3 | 3 | - | - |
| Reach Compliance Code | compli | compli | compliant | compliant | unknow | compli | - | - |
| Shell connection | DRAIN | DRAIN | ISOLATED | ISOLATED | DRAIN | DRAIN | - | - |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | - | - |
| Minimum drain-source breakdown voltage | 1000 V | 100 V | 450 V | 500 V | 1000 V | 100 V | - | - |
| Maximum drain current (Abs) (ID) | 8 A | 15 A | 12 A | 12 A | 8 A | 15 A | - | - |
| Maximum drain current (ID) | 8 A | 15 A | 12 A | 12 A | 8 A | 15 A | - | - |
| Maximum drain-source on-resistance | 1.6 Ω | 0.18 Ω | 0.55 Ω | 0.6 Ω | 1.6 Ω | 0.18 Ω | - | - |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - | - |
| JESD-30 code | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | - | - |
| JESD-609 code | e2 | e0 | e0 | e0 | e0 | e2 | - | - |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 | - | - |
| Number of terminals | 3 | 3 | 3 | 3 | 3 | 3 | - | - |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | - | - |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | - | - |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - | - |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | - |
| Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | - | - |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | - |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | - | - |
| Maximum power dissipation(Abs) | 150 W | 50 W | 60 W | 60 W | 150 W | 50 W | - | - |
| Maximum pulsed drain current (IDM) | 24 A | 60 A | 48 A | 48 A | 24 A | 60 A | - | - |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | - | - |
| surface mount | NO | NO | NO | NO | NO | NO | - | - |
| Terminal surface | Tin/Copper (Sn/Cu) | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN COPPER | - | - |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | - | - |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | - | - |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | - |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | - | - |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | - | - |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | - | - |
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