2SK1329 datasheet, PDF - EEWORLD Datasheet

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2SK1329: DescriptionSilicon N Channel MOS FET; CategoryDiscrete semiconductor The transistor; File Size75KB，7 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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2SK1329 Overview

Silicon N Channel MOS FET

2SK1329 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Renesas Electronics Corporation
Parts packaging code	TO-3PFM
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	compliant
Is Samacsys	N
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (Abs) (ID)	12 A
Maximum drain current (ID)	12 A
Maximum drain-source on-resistance	0.6 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	60 W
Maximum pulsed drain current (IDM)	48 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

2SK1329 Related Products

	2SK1329	2SK1301	2SK1328	2SK1934	2SK1301-E	GRM219R61A225KA01J	S6272	2SK1934-E
Description	Silicon N Channel MOS FET	Silicon N Channel MOS FET	Silicon N Channel MOS FET	Silicon N Channel MOS FET	Silicon N Channel MOS FET	Chip Multilayer Ceramic Capacitors for General Purpose	18 watt; Mini Spiral Compact Fluorescent; 4100K; 82 CRI; Medium base; 120 volts; 3-pack	Silicon N Channel MOS FET
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Lead free	-	-	Lead free
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	conform to	-	-	conform to
Parts packaging code	TO-3PFM	TO-220AB	TO-3PFM	TO-3P	TO-220AB	-	-	TO-3P
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	-	-	SC-65, TO-3P, 3 PIN
Contacts	3	3	3	3	3	-	-	4
Reach Compliance Code	compliant	compli	compliant	unknow	compli	-	-	compli
Shell connection	ISOLATED	DRAIN	ISOLATED	DRAIN	DRAIN	-	-	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	-	-	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V	100 V	450 V	1000 V	100 V	-	-	1000 V
Maximum drain current (Abs) (ID)	12 A	15 A	12 A	8 A	15 A	-	-	8 A
Maximum drain current (ID)	12 A	15 A	12 A	8 A	15 A	-	-	8 A
Maximum drain-source on-resistance	0.6 Ω	0.18 Ω	0.55 Ω	1.6 Ω	0.18 Ω	-	-	1.6 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-	-	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	-	-	R-PSFM-T3
JESD-609 code	e0	e0	e0	e0	e2	-	-	e2
Number of components	1	1	1	1	1	-	-	1
Number of terminals	3	3	3	3	3	-	-	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	-	-	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	-	-	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	-	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	-	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	-	-	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	-	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	-	-	N-CHANNEL
Maximum power dissipation(Abs)	60 W	50 W	60 W	150 W	50 W	-	-	150 W
Maximum pulsed drain current (IDM)	48 A	60 A	48 A	24 A	60 A	-	-	24 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	-	Not Qualified
surface mount	NO	NO	NO	NO	NO	-	-	NO
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN COPPER	-	-	Tin/Copper (Sn/Cu)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	-	-	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	-	-	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	-	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	-	-	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	-	-	SILICON
Base Number Matches	1	1	1	1	1	-	-	1

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