AF4835PS datasheet, PDF - EEWORLD Datasheet

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AF4835PS: DescriptionPower Field-Effect Transistor, 8A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8; CategoryDiscrete semiconductor The transistor; File Size464KB，5 Pages; ManufacturerIntegrated Circuit Systems（IDT ）

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AF4835PS Overview

Power Field-Effect Transistor, 8A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

AF4835PS Parametric

Parameter Name	Attribute value
Parts packaging code	SOT
package instruction	SMALL OUTLINE, R-PDSO-G8
Contacts	8
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	8 A
Maximum drain-source on-resistance	0.02 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8
Number of components	1
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	P-CHANNEL
Maximum pulsed drain current (IDM)	50 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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AF4835P

P-Channel Enhancement Mode Power MOSFET

Features

- Simple Drive Requirement

- Low On-resistance

- Fast Switching

General Description

The advanced power MOSFET provides the designer

with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The SO-8 package is universally preferred for all

commercial-industrial surface mount applications and

suited for low voltage applications such as DC/DC

converters.

(A)

-8

Product Summary

DSS

(V)

-30

DS(ON)

(mΩ)

Pin Assignments

Pin Descriptions

Pin Name

Description

Source

Gate

Drain

SO-8

Ordering information

A X

Feature

F :MOSFET

4835P X X X

Package

S: SO-8

Lead Free

Blank : Normal

L : Lead Free Package

Packing

Blank : Tube or Bulk

A : Tape & Reel

This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of

this product. No rights under any patent accompany the sale of the product.

Rev. 1.3 Aug 18, 2005

1/5

AF4835PS Related Products

	AF4835PS	AF4835PSA	AF4835PSLA	AF4835PSL
Description	Power Field-Effect Transistor, 8A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8	Power Field-Effect Transistor, 8A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8	Power Field-Effect Transistor, 8A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8	Power Field-Effect Transistor, 8A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8
Parts packaging code	SOT	SOT	SOT	SOT
package instruction	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8
Contacts	8	8	8	8
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V	30 V	30 V	30 V
Maximum drain current (ID)	8 A	8 A	8 A	8 A
Maximum drain-source on-resistance	0.02 Ω	0.02 Ω	0.02 Ω	0.02 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8
Number of components	1	1	1	1
Number of terminals	8	8	8	8
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL
Maximum pulsed drain current (IDM)	50 A	50 A	50 A	50 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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