GBJ2003 datasheet, PDF - EEWORLD Datasheet

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GBJ2003: Description20 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE; Categorysemiconductor Discrete semiconductor; File Size65KB，2 Pages; ManufacturerUniohm Corp.; Websitehttp://www.uniohm.com.tw/

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GBJ2003 Overview

20 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE

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GBJ2001

THRU

GBJ2007

SINGLE PHASE 20.0 AMP BRIDGE RECTIFIERS

VOLTAGE RANGE

50 to 1000 Volts

CURRENT

20.0 Amperes

GBJ

1.193(30.3)

1.169(29.7)

.134(3.4)

.122(3.1)

.203(5.2)

.189(4.8)

.150(3.8)

.134(3.4)

.441(11.2)

.425(10.8)

FEATURES

* Ideal for printed circuit board

* Low forward voltage

* Low leakage current

* Mounting position: Any

.094(2.4)

.078(2.0)

.043(1.1)

.035(0.9)

~

.165(4.2)

.150(3.8)

.708(18.0)

.669(17.0)

.800(20.3)

.776(19.7)

.189

(4.8)

.402(10.2) .303(7.7) .303(7.7)

SPACING

.386(9.8) .287(7.3) .287(7.3)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating 25 C ambient temperature uniess otherwies specified.

Single phase half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

+

.114(2.9)

.098(2.5)

.031(0.8)

.023(0.6)

Dimensions in inches and (millimeters)

TYPE NUMBER

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Current @Tc=100 C

Peak Forward Surge Current, 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

Maximum Forward Voltage Drop per Bridge Element at 10.0A D.C.

Maximum DC Reverse Current

Ta=25 C

at Rated DC Blocking Voltage

Typical Junction Capacitance (Note 1)

Typical Thermal Resistance Rq

JC

(Note 2)

Operating Temperature Range, T

J

Storage Temperature Range, T

STG

NOTES:

GBJ2001 GBJ2002 GBJ2003 GBJ2004 GBJ2005 GBJ2006 GBJ2007

UNITS

50

35

50

100

70

100

200

140

200

400

280

400

20.0

240

1.05

10

500

60

0.8

-55

+150

600

420

600

800

560

800

1000

700

1000

V

A

V

A

PF

C/W

C

Ta=125 C

1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

2. Thermal Resistance from Junction to Case with device mounted on 300mm x 300mm x 1.6mm Cu Plate Heatsink.

GBJ2003 Related Products

	GBJ2003	GBJ2001	GBJ2002	GBJ2007	GBJ2006
Description	20 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE	20 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE	3.6 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE	20 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE	3.6 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
Is it lead-free?	-	Lead free	Lead free	-	Lead free
Is it Rohs certified?	-	conform to	conform to	-	conform to
Maker	-	Uniohm Corp.	Uniohm Corp.	-	Uniohm Corp.
package instruction	-	R-PSFM-T4	R-PSFM-T4	-	R-PSFM-T4
Contacts	-	4	4	-	4
Manufacturer packaging code	-	GBJ	GBJ	-	GBJ
Reach Compliance Code	-	unknown	unknow	-	unknow
Minimum breakdown voltage	-	50 V	100 V	-	800 V
Configuration	-	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	-	BRIDGE, 4 ELEMENTS
Diode component materials	-	SILICON	SILICON	-	SILICON
Diode type	-	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	-	BRIDGE RECTIFIER DIODE
JESD-30 code	-	R-PSFM-T4	R-PSFM-T4	-	R-PSFM-T4
Maximum non-repetitive peak forward current	-	240 A	240 A	-	240 A
Number of components	-	4	4	-	4
Phase	-	1	1	-	1
Number of terminals	-	4	4	-	4
Maximum operating temperature	-	150 °C	150 °C	-	150 °C
Minimum operating temperature	-	-55 °C	-55 °C	-	-55 °C
Maximum output current	-	20 A	20 A	-	20 A
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY
Package shape	-	RECTANGULAR	RECTANGULAR	-	RECTANGULAR
Package form	-	FLANGE MOUNT	FLANGE MOUNT	-	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED
Maximum repetitive peak reverse voltage	-	50 V	100 V	-	800 V
surface mount	-	NO	NO	-	NO
Terminal form	-	THROUGH-HOLE	THROUGH-HOLE	-	THROUGH-HOLE
Terminal location	-	SINGLE	SINGLE	-	SINGLE
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED

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