EEWORLDEEWORLDEEWORLD

Part Number

Search
 PDF

LC12AB

Description
Trans Voltage Suppressor Diode, 1500W, Bidirectional, 1 Element, Silicon, DO-13
CategoryDiscrete semiconductor    diode   
File Size381KB,3 Pages
ManufacturerLittelfuse
Websitehttp://www.littelfuse.com
Download Datasheet Parametric View All

LC12AB Overview

Trans Voltage Suppressor Diode, 1500W, Bidirectional, 1 Element, Silicon, DO-13

LC12AB Parametric

Parameter NameAttribute value
package instructionO-MALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW CAPACITANCE, LOW IMPEDANCE
Maximum breakdown voltage14.7 V
Minimum breakdown voltage13.3 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-13
JESD-30 codeO-MALF-W2
Maximum non-repetitive peak reverse power dissipation1500 W
Number of components1
Number of terminals2
Package body materialMETAL
Package shapeROUND
Package formLONG FORM
polarityBIDIRECTIONAL
Maximum power dissipation1 W
Certification statusNot Qualified
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
[Project source code] Digital tube companion - binary to BCD
This article and design code were written by FPGA enthusiast Xiao Meige. Without the author's permission, this article is only allowed to be copied and reproduced on online forums, and the original au...
小梅哥 Altera SoC
Talk about the method of suppressing the self-excited howling of the microphone
[i=s]This post was last edited by jameswangsynnex on 2015-3-3 19:59[/i]All sound systems that use microphones to pick up sound have the possibility of feedback howling. Microphone howling is very harm...
lorant Mobile and portable
【CLUE】Programming with CircuitPython
The CLUE development board has a high-resolution screen and a variety of sensors, making it very playable. The best way to program CLUE is to use CircuitPython, and you can also use Arduino. Graphical...
dcexpert MicroPython Open Source section
Uncover the mystery of MOS tube damage! What other reasons do you know?
Mos switch principle (brief): MOS is a voltage-driven device. As long as an appropriate voltage is applied between the gate and the source, a path between the source and the drain is formed. The resis...
eric_wang Power technology
Let's discuss whether GaN materials are a key technology in 5G applications.
The construction of 5G needs to consider factors such as cost, reliability, and performance. Traditional materials have limitations compared to GaN. For example, the characteristics of GaN materials t...
alan000345 RF/Wirelessly
FPGA Basics (I)
...
至芯科技FPGA大牛 FPGA/CPLD

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号