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K6T4008V1B-GF10T

Description
Standard SRAM, 512KX8, 100ns, CMOS, PDSO32
Categorystorage    storage   
File Size145KB,9 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K6T4008V1B-GF10T Overview

Standard SRAM, 512KX8, 100ns, CMOS, PDSO32

K6T4008V1B-GF10T Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionSOP, SOP32,.56
Reach Compliance Codecompliant
Maximum access time100 ns
I/O typeCOMMON
JESD-30 codeR-PDSO-G32
JESD-609 codee0
memory density4194304 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of terminals32
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize512KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Encapsulate equivalent codeSOP32,.56
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialPARALLEL
power supply3.3 V
Certification statusNot Qualified
Minimum standby current2 V
Maximum slew rate0.045 mA
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Base Number Matches1
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