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SX3595US-1

Description
Rectifier Diode, 1 Element, 0.15A, Silicon, HERMETIC SEALED, GLASS, D-5D, MELF-2
CategoryDiscrete semiconductor    diode   
File Size216KB,2 Pages
ManufacturerSENSITRON
Websitehttp://www.sensitron.com/
Download Datasheet Parametric View All

SX3595US-1 Overview

Rectifier Diode, 1 Element, 0.15A, Silicon, HERMETIC SEALED, GLASS, D-5D, MELF-2

SX3595US-1 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeMELF
package instructionO-LELF-R2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-LELF-R2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current0.15 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formWRAP AROUND
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 5086, REV. A.1
1N3595-1, 1N3595US-1
Standard
VF CONTROLLED DIODE
A
V AI L AB L E AS
1 N , J AN , J AN T X , J ANT XV
JANS
JAN EQUIVALENT *
SJ*, SX*, SV*, SS*
V
F
Controlled Diodes
Qualified per MIL-PRF-19500/241
DESCRIPTION:
This voidless hermetically sealed Vf controlled diode is military qualified per MIL-PRF-19500/241
and is targeted for space, commerical and military aircraft, military vehicles, shipboard markets
and all high reliability applications.
FEATURES / BENEFITS:
Hermetic, non-cavity glass package
Category I Metallurgically bonded
All devices are 100% hot solder dipped
JAN/ JANTX/ JANTXV available per MIL-PRF-
19500/241
“JANS Plus” removes atypical/out of family V
F
MAXIMUM RATINGS:
Operating and Storage Temperature: -65 C to
+175 C
Forward Voltage (max): 1Vdc @ 200mA,
.92Vdc @ 100mA
Reverse Leakage Current (max): 1 nAd c @ V
R
o
o
ELECTRICAL CHARACTERISTICS:
Type
1N3595,
1N3595US-1
V
R
V(pk)
125
Io
MA
150
Tp=1s
I
FSM
T
STG
, T
J
C
-65 to +175
o
L=.375
o
R
JL
R
JEC
o
L=0
R
JX
o
mA(pk)
500
C/W
250
C/W
40
C/W
245
Maximum ratings T
A
=+25
o
C
*Sensitron
space equivalent diodes
are manufactured and screened to MIL-PRF-19500 flow and guidelines starting from
wafer fabrication through assembly and testing using our internal specification.
©2013 Sensitron Semiconductor
221 West Industry Court
Deer Park, NY 11729-4681
Phone (631) 586 7600 Fax (631) 242 9798
www.sensitron.com
sales@sensitron.com

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