RT2N14M
COMPOSITE TRANSISTOR WITH RESISTOR
FOR SWITCHING APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
RT2N14M is a composite transistor with built-in bias resistor
OUTLINE DRAWING
2.1
1.25
Unit:mm
●Built-in bias resistor ( R1=10KΩ , R2=47KΩ )
●Mini package for easy mounting
2.0
0.65
①
②
0.65
③
⑤
APPLICATION
Inverted circuit , switching circuit , interface circuit , driver circuit
④
0.9
0.65
⑤
RTr1
④
RTr2
0∼0.1
R1
①
R2
②
R2
③
R1
TERMINAL CONNECTOR
①
：BASE1
②
：EMITTER
（COMMON
）
③
：BASE2
④
：COLLECTOR2
⑤
：COLLECTOR1
JEITA：SC-88A
MAXIMUM RATINGS
Symbol
V
CBO
V
EBO
V
CEO
I
C
I
CM
P
C
T
j
T
stg
（Ta=25℃ （
）RTr1、RTr2
）
Parameter
Ratings
50
6
50
100
200
150
＋150
-55∼＋150
Unit
V
V
V
mA
mA
mW
℃
℃
MARKING
⑤
④
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation
（Total
Ta=25℃
）
Junction temperature
Storage temperature
N
5
①
② ③
ISAHAYA ELECTRONICS CORPORATION
0.13
0.2
FEATURE
RT2N14M
COMPOSITE TRANSISTOR WITH RESISTOR
FOR SWITCHING APPLICATION
SILICON NPN EPITAXIAL TYPE
ELECTRICAL CHARACTERISTICS
Symbol
V
(BR)CBO
I
CBO
h
FE
V
CE(sat)
V
I(ON)
V
I(OFF)
R
1
R
2
/R
1
f
T
Parameter
Collector to Emitter break down voltage
Collector cut off current
DC forward current gain
Collector to Emitter saturation voltage
Input on voltage
Input off voltage
Input resistor
Resistor ratio
Gain band width product
V
CE
=6V，I
E
=-10mA
（Ta=25℃ （
）RTr1、RTr2
）
Test conditions
I
C
=100μA，R
BE
=∞
V
CB
=50V，I
E
=0
V
CE
=5V，I C=5mA
I
C
=10mA，I
B
=0.5mA
V
CE
=0.2V，I
C
=5mA
V
CE
=5V，I
C
=100μA
Limits
Min
50
-
50
-
-
0.4
7
4.2
Typ
-
-
-
0.1
1.0
0.7
10
4.7
200
Max
-
0.1
-
0.3
1.8
-
13
5.1
Unit
V
μA
-
V
V
V
KΩ
-
MHz
TYPICAL Characteristics
（Tr1、Tr２
）
Input on voltage-collector current
10
Input on voltage ＩＯ ） Ｖ
Ｖ（ Ｎ （ ）
1000
DC forward current Gain -collector current
1
DC forward current Gain Ｆ
½Ｅ
1
10
collector current Ｃ ½Ａ
Ｉ（ ）
collector current-Input off voltage
100
100
0.1
10
1
10
collector current Ｃ ½Ａ
Ｉ（ ）
100
1000
collector current Ｉ ½Ａ
Ｃ（ ）
100
10
0.0
0.4
0.8
1.2
1.6
Input off voltage ＩＯＦ ） Ｖ
Ｖ（ Ｆ （ ）
2.0
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
Keep safety first in your circuit designs!
·
ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or
mishap.
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·
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·
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originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials.
·
All information contained in these materials, including product data, diagrams and charts, represent information on products
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Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed
herein.
·
ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used
under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an
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·
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h
prohibited.
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Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these
materials or the products contained therein.
Jan.2003
Microcontroller MCU
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